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PDF HMC757 Data sheet ( Hoja de datos )
| Número de pieza | HMC757 | |
| Descripción | GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER | |
| Fabricantes | Hittite Microwave Corporation | |
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Hay una vista previa y un enlace de descarga de HMC757 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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v00.0409
Typical Applications
The HMC757 is ideal for:
• Point-to-Point Radios
3 • Point-to-Multi-Point Radios
• VSAT
• Military & Space
Functional Diagram
HMC757
GaAs pHEMT MMIC 1/2 WATT
POWER AMPLIFIER, 16 - 24 GHz
Features
Saturated Output Power: +30 dBm @ 30% PAE
High Output IP3: +37 dBm
High Gain: 22 dB
DC Supply: +7V @ 395 mA
50 Ohm Matched Input/Output
Die Size: 2.4 x 0.9 x 0.1 mm
General Description
The HMC757 is a three stage GaAs pHEMT MMIC 1/2
Watt Power Amplifier which operates between 16 and
24 GHz. The HMC757 provides 22 dB of gain, and +30
dBm of saturated output power at 30% PAE from a
+7V supply. The RF I/Os are DC blocked and matched
to 50 Ohms for ease of integration into Multi-Chip-
Modules (MCMs). All data is taken with the chip in a
50 Ohm test fixture connected via 0.025 mm (1 mil)
diameter wire bonds of length 0.31 mm (12 mils).
www.DataSheet4U.com
Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 395 mA[1]
Parameter
Min. Typ. Max. Min.
Frequency Range
16 - 20
Gain
19 22
21
Gain Variation Over Temperature
0.028
Input Return Loss
10
Output Return Loss
15
Output Power for 1 dB Compression (P1dB)
27 29
27
Saturated Output Power (Psat)
30
Output Third Order Intercept (IP3)[2]
38
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd= 395 mA typical.
[2] Measurement taken at +7V @ 395 mA, Pout / Tone = +17 dBm
395
Typ.
20 - 24
24
0.032
12
13
29.5
30
36
395
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
3 - 134
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
v00.0409
3
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
Junction Temperature
Continuous Pdiss (T= 85 °C)
(derate 43 mW/°C above 85 °C)
Thermal Resistance
(junction to die bottom)
Storage Temperature
Operating Temperature
8V
+26 dBm
150 °C
2.8 W
23.4 °C/W
-65 to +150 °C
-55 to +85 °C
Outline Drawing
HMC757
GaAs pHEMT MMIC 1/2 WATT
POWER AMPLIFIER, 16 - 24 GHz
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+6.5
375
+7.0 395
+7.5 411
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 395 mA at +7V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
www.DataSheet4U.com
3 - 138
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC757.PDF ] | |
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