HMC758LP3 PDF даташит
Спецификация HMC758LP3 изготовлена «Hittite Microwave Corporation» и имеет функцию, называемую «GaAs SMT PHEMT LOW NOISE AMPLIFIER». |
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Детали детали
Номер произв | HMC758LP3 |
Описание | GaAs SMT PHEMT LOW NOISE AMPLIFIER |
Производители | Hittite Microwave Corporation |
логотип |
8 Pages
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v00.1108
8
Typical Applications
The HMC758LP3(E) is ideal for:
• Cellular Infrastructure, WiMAX & LTE/4G
• Software Defined Radios
• Repeaters and Femtocells
• Access Points
• Test & Measurement Equipment
Functional Diagram
www.DataSheet4U.com
HMC758LP3 / 758LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Features
Noise Figure: 1.7 dB
Gain: 22 dB
Output IP3: +37 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3 mm SMT Package: 9 mm2
General Description
The HMC758LP3(E) is a GaAs PHEMT MMIC Low
Noise Amplifier that is ideal for Cellular Infrastructure,
WiMAX & LTE/4G basestation front-end receivers
operating between 700 and 2200 MHz. The amplifier
has been optimized to provide 1.7 dB noise figure,
21 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC758LP3(E) can
be biased with +3V to +5V and features an externally
adjustable supply current, which allows the designer
to tailor the linearity performance of the LNA for
each application.
8 - 342
Electrical Specifications, TA = +25° C, R1= 390Ω, R2= 560Ω*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
Vdd = +3V
Min. Typ. Max. Min. Typ. Max.
700 - 1700
1700 - 2200
19 21.8
16 19.4
0.005
0.01
1.6 2.5
1.4 1.8
15 13
11 15
Vdd = +5V
Min. Typ. Max. Min. Typ. Max.
700 - 1700
1700 - 2200
20 22.7
18 21.3
0.004
0.01
1.7 2.6
1.6 2.0
14 14
10 12
Units
MHz
dB
dB/ °C
dB
dB
dB
16 18
18 20
20.5 22.5
22 24
dBm
20 21.5 23.5 25 dBm
31 31.5 36
35 dBm
80 102 130 80 102 130 190 227 260 190 227 260 mA
* R1 & R2 resistors set current, see application circuit herein
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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v00.1108
Broadband Gain & Return Loss
25
20
15
10
5
0
-5
-10
-15
-20
-25
0
S11
1
Vdd=5V
Vdd=3V
S21
23 4
FREQUENCY (GHz)
S22
5
6
Gain vs. Temperature, Vdd = +3V
25
23
21
19
+25C
+85C
-40C
17
15
www.DataSheet4U0..5com 0.9
1.3 1.7
FREQUENCY (GHz)
2.1
2.5
Output Return Loss vs.
Temperature, Vdd = +5V
0
-5
+25C
+85C
-40C
-10
-15
-20
0.5
0.9 1.3 1.7 2.1
FREQUENCY (GHz)
2.5
HMC758LP3 / 758LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Gain vs. Temperature, Vdd = +5V
25
23
21
19
+25C
+85C
-40C
17
15
0.5
0.9 1.3 1.7 2.1
FREQUENCY (GHz)
2.5
Input Return Loss vs.
Temperature, Vdd = +5V
0
-5
+25C
+85C
-40C
-10
-15
-20
0.5
0.9 1.3 1.7 2.1
FREQUENCY (GHz)
2.5
Reverse Isolation vs.
Temperature, Vdd = +5V
0
-10
+25C
+85C
-20 -40C
-30
-40
-50
-60
0.5
0.9 1.3 1.7 2.1
FREQUENCY (GHz)
2.5
8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 343
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v00.1108
8
Noise Figure vs. Temperature [1]
3
+85C
2.5
Vdd=5V
Vdd=3V
2
1.5
+25C
1
-40C
0.5
0
0.5 0.9 1.3 1.7 2.1
FREQUENCY (GHz)
2.5
Output IP3 and Supply Current vs.
Supply Voltage @ 900 MHz
45
300
40 IP3
250
35 200
30 150
25 Idd 100
20 50
www.DataSheet42U.7.com3.1 3.5 3.9 4.3 4.7 5.1 5.5
Voltage Supply (V)
HMC758LP3 / 758LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Output IP3 vs. Temperature
45
Vdd=5V
40
35
30
25
20
0.5
+25C
+85C
-40C
Vdd=3V
0.9 1.3 1.7 2.1
FREQUENCY (GHz)
2.5
Output IP3 and Supply Current vs.
Supply Voltage @ 1900 MHz
45
300
40 IP3
250
35 200
30 150
25 Idd 100
20 50
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
Voltage Supply (V)
Output IP3 vs. Output Power @ 900 MHz
40
38
36 Vdd=3V
Vdd=5V
34
32
30
-10
-5 0
5
OUTPUT POWER (dBm)
10
Output IP3 vs. Output Power @ 1900 MHz
36
35
34
33 Vdd=3V
Vdd=5V
32
31
30
-10
-5 0
5
OUTPUT POWER (dBm)
10
8 - 344
[1] Measurement reference plane shown on evaluation PCB drawing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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Номер в каталоге | Описание | Производители |
HMC758LP3 | GaAs SMT PHEMT LOW NOISE AMPLIFIER | Hittite Microwave Corporation |
HMC758LP3E | GaAs SMT PHEMT LOW NOISE AMPLIFIER | Hittite Microwave Corporation |
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