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WTK9971 PDF даташит

Спецификация WTK9971 изготовлена ​​​​«Weitron Technology» и имеет функцию, называемую «Surface Mount Dual N-Channel Enhancement Mode MOSFET».

Детали детали

Номер произв WTK9971
Описание Surface Mount Dual N-Channel Enhancement Mode MOSFET
Производители Weitron Technology
логотип Weitron Technology логотип 

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WTK9971 Даташит, Описание, Даташиты
Surface Mount Dual N-Channel
Enhancement Mode MOSFET
P b Lead(Pb)-Free
Features:
*Super high dense cell design for low RDS(ON)
RDS(ON)<50mΩ @VGS = 10V
RDS(ON)<60mΩ @VGS = 4.5V
*Simple Drive Requirement
*Dual N MOSFET Package
*SO-8 Package
WTK9971
DRAIN CURRENT
5 AMPERES
DRAIN SOURCE VOLTAGE
60 VOLTAGE
1
SO-8
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
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Current
(1)
(TA
=25˚C)
(TA =70˚C)
Pulsed Drain Current (2)
Power Dissipation (1) (TA =25˚C)
Symbol
VDS
VGS
ID
IDM
PD
Value
60
-+ 20
5.0
3.2
30
2
Maximax Junction-to-Ambient (1) RθJA 62.5
Operating Junction and Storage
Temperature Range
TJ, Tstg
-55 to 150
Unite
V
V
A
A
W
C/W
C
Device Marking
WTK9971=9971SS
WEITRON
http://www.weitron.com.tw
1/5
19-Nov-08









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WTK9971 Даташит, Описание, Даташиты
WTK9971
Electrical Characteristics (TA=25 C Unless otherwise noted)
Parameter
Symbol Min.
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temperature Coefficient BVDSS / Tj
Gate Threshold Voltage
VGS(th)
Forward Transconductance
gfs
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
60
-
1.0
-
-
-
-
Static Drain-Source On-Resistance2 RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
wwwO.DuatptauSthCeeat4pUa.ccoimtance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.06
-
7
-
-
-
-
-
32.5
4.9
8.8
9.6
10
30
5.5
1658
156
109
Max.
-
-
3.0
-
±100
1
25
50
60
-
-
-
-
-
-
-
-
-
-
Unit Test Conditions
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=5A
nA VGS= ±25V
uA VDS=60V, VGS=0
uA VDS=48V, VGS=0
VGS=10V, ID=5A
m
VGS=4.5V, ID=2.5A
ID=5A
nC VDS=48V
VGS=10V
VDS=30V
ID=5A
ns VGS=10V
RG=3.3
RD=6
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
29.2
48
Max.
1.2
-
-
Unit Test Conditions
V IS=1.6A, VGS=0V
ns IS=5A, VGS=0V
nC dI/dt=100A/?s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135 /W when mounted on Min. copper pad.
WEITRON
http://www.weitron.com.tw
2/5
19-Nov-08









No Preview Available !

WTK9971 Даташит, Описание, Даташиты
WTK9971
WE ITR ON
www.DataSheet4U.com
WEITRON
http://www.weitron.com.tw
3/5
19-Nov-08










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Номер в каталогеОписаниеПроизводители
WTK9971Surface Mount Dual N-Channel Enhancement Mode MOSFETWeitron Technology
Weitron Technology

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