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CG6257AM PDF даташит

Спецификация CG6257AM изготовлена ​​​​«Weida Semiconductor» и имеет функцию, называемую «4Mb (256K x 16) Pseudo Static RAM».

Детали детали

Номер произв CG6257AM
Описание 4Mb (256K x 16) Pseudo Static RAM
Производители Weida Semiconductor
логотип Weida Semiconductor логотип 

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CG6257AM Даташит, Описание, Даташиты
PRELIMINARY
CG6257AM
4Mb (256K x 16) Pseudo Static RAM
Features
• Wide voltage range: 2.70V–3.30V
• Access Time: 70ns
• Ultra-low active power
— Typical active current: 2.0mA @ f = 1 MHz
— Typical active current: 13mA @ f = fmax
• Ultra low standby power
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Offered in a 48 Ball BGA Package
Functional Description[1]
The CG6257AM is a high-performance CMOS Pseudo static
RAM organized as 256K words by 16 bits that supports an
asynchronous memory interface. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life® (MoBL) in
portable applications such as cellular telephones. The device
can be put into standby mode reducing power consumption by
more than 99% The device can also be put into standby mode
when deselected (CE HIGH or both BHE and BLE are HIGH).
The input/output pins (I/O0 through I/O15) are placed in a
high-impedance state when: deselected (CE HIGH ), outputs
are disabled (OE HIGH), both Byte High Enable and Byte Low
Enable are disabled (BHE, BLE HIGH), or during a write
operation (CE LOW and WE LOW). The addresses must not
be toggled once the read is started on the device.
Writing to the device is accomplished by taking Chip Enables
(CE LOW ) and Write Enable (WE) input LOW. If Byte Low
Enable (BLE) is LOW, then data from I/O pins (I/O0 through
I/O7), is written into the location specified on the address pins
(A0 through A17). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O8 through I/O15) is written into the location
specified on the address pins (A0 through A17).
Reading from the device is accomplished by taking Chip
Enables (CE LOW) and Output Enable (OE) LOW while
forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE)
is LOW, then data from the memory location specified by the
address pins will appear on I/O0 to I/O7. If Byte High Enable
(BHE) is LOW, then data from memory will appear on I/O8 to
I/O15. See the truth table at the back of this datasheet for a
complete description of read and write modes
Logic Block Diagram
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A10
A9
A
A
8
7
A6
A5
A4
A3
A2
A
A
1
0
DATA IN DRIVERS
256K × 16
RAM Array
I/O0 – I/O7
I/O8 – I/O15
COLUMN DECODER
Power- Down
Circuit
BHE
BLE
BHE
WE
OE
BLE
CE
CE
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Weida Semiconductor, Inc.
38-XXXXX
Revised August 2003









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CG6257AM Даташит, Описание, Даташиты
Pin Configuration[2, 3, 4]
PRELIMINARY
FBGA
Top View
12 34 56
BLE OE A0 A1 A2 NC
I/O8 BHE A3 A4 CE I/O0
I/O9 I/O10 A5 A6 I/O1 I/O2
VSS I/O11 A17 A7 I/O3 Vcc
VCC I/O12 GND A16 I/O4 Vss
I/O14 I/O13 A14 A15 I/O5 I/O6
I/O15
NC/
A19
A12
A13
WE
I/O7
NC/
A18
A8
A9
A10
A11
NC/
A20
A
B
C
D
E
F
G
H
Note:
2. DNU pins have to be left floating.
3. Ball H1, G2 and ball H6 for the FBGA package can be used to upgrade to a 8M, 16M and a 32M density respectively.
4. NC “no connect” - not connected internally to the die.
CG6257AM
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38-XXXXX
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CG6257AM Даташит, Описание, Даташиты
PRELIMINARY
CG6257AM
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................–65°C to + 150°C
Ambient Temperature with
Power Applied............................................ –55°C to + 125°C
Supply Voltage to Ground Potential................. –0.4V to 4.6V
DC Voltage Applied to Outputs
in High Z State[5, 6, 7] ........................................–0.4V to 3.3V
DC Input Voltage[5, 6, 7].....................................–0.4V to 3.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .....................................................>200 mA
Operating Range[9]
Device
CG6257AM
Range
Industrial
Ambient Temperature
–25°C to +85°C
VCC
2.70V to 3.30V
Product Portfolio
Product
VCC Range (V)
Min.
Typ.[8]
Max.
Speed
(ns)
Power Dissipation
Operating ICC(mA)
f = 1MHz
Typ.[8] Max.
f = fmax
Typ.[8] Max.
Standby ISB2(µA)
Typ.[8] Max.
CG6257AM
2.70 3.0 3.30 70 2
4 13 17 55
80
Notes:
5. VIL(MIN) = -0.5V for pulse durations less than 20ns.
6. VIH(Max) = Vcc + 0.5V for pulse durations less than 20ns.
7. Overshoot and undershoot specifications are characterized and are not 100% tested.
8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25°C.
9. Vcc must be at minimal operational levels before inputs are turned ON.
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38-XXXXX
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Номер в каталогеОписаниеПроизводители
CG6257AM4Mb (256K x 16) Pseudo Static RAMWeida Semiconductor
Weida Semiconductor

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