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CG6258AM PDF даташит

Спецификация CG6258AM изготовлена ​​​​«Weida Semiconductor» и имеет функцию, называемую «4Mb (256K x 16) Pseudo Static RAM».

Детали детали

Номер произв CG6258AM
Описание 4Mb (256K x 16) Pseudo Static RAM
Производители Weida Semiconductor
логотип Weida Semiconductor логотип 

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CG6258AM Даташит, Описание, Даташиты
ADVANCE INFORMATION
CG6258AM
4Mb (256K x 16) Pseudo Static RAM
Features
• Wide voltage range: 2.70V–3.30V
• Access Time: 70ns
• Ultra-low active power
— Typical active current: 2.0mA @ f = 1 MHz
— Typical active current: 13mA @ f = fmax
• Ultra low standby power
• Easy memory expansion with CE, CE2, and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Offered in a 48 Ball BGA Package
Functional Description[1]
The CG6258AM is a high-performance CMOS Pseudo static
RAM organized as 256K words by 16 bits that supports an
asynchronous memory interface. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life® (MoBL) in
portable applications such as cellular telephones. The device
can be put into standby mode reducing power consumption by
more than 99% The device can also be put into standby mode
when deselected (CE HIGH or CE2 LOW or both BHE and BLE
are HIGH). The input/output pins (I/O0 through I/O15) are
placed in a high-impedance state when: deselected (CEHIGH
or CE2 LOW), outputs are disabled (OE HIGH), both Byte High
Enable and Byte Low Enable are disabled (BHE, BLE HIGH),
or during a write operation (CE LOW, CE2 HIGH and WE
LOW). The addresses must not be toggled once the read
is started on the device.
Writing to the device is accomplished by taking Chip Enables
(CE LOW and CE2 HIGH) and Write Enable (WE) input LOW.
If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0
through I/O7), is written into the location specified on the
address pins (A0 through A17). If Byte High Enable (BHE) is
LOW, then data from I/O pins (I/O8 through I/O15) is written
into the location specified on the address pins (A0 through
A17).
Reading from the device is accomplished by taking Chip
Enables (CE LOW and CE2 HIGH) and Output Enable (OE)
LOW while forcing the Write Enable (WE) HIGH. If Byte Low
Enable (BLE) is LOW, then data from the memory location
specified by the address pins will appear on I/O0 to I/O7. If Byte
High Enable (BHE) is LOW, then data from memory will
appear on I/O8 to I/O15. See the truth table at the back of this
datasheet for a complete description of read and write modes
Logic Block Diagram
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A10
A9
A
A
A
8
7
6
A5
A4
A3
A2
A
A
1
0
DATA IN DRIVERS
256K × 16
RAM Array
COLUMN DECODER
I/O0 – I/O7
I/O8 – I/O15
BHE
WE
OE
CE2
CE
BLE
Power- Down
Circuit
BHE
BLE
CE2
CE
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Weida Semiconductor, Inc.
38-XXXXX
Revised August 2003









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CG6258AM Даташит, Описание, Даташиты
Pin Configuration[2, 3, 4]
ADVANCE INFORMATION
FBGA
Top View
12 34 56
BLE OE A0 A1 A2 CE2
I/O8 BHE A3 A4 CE I/O0
I/O9 I/O10 A5 A6 I/O1 I/O2
VSS I/O11 A17 A7 I/O3 Vcc
VCC I/O12 GND A16 I/O4 Vss
I/O14 I/O13 A14 A15 I/O5 I/O6
I/O15 NC/ A12 A13 WE I/O7
A18 A8 A9 A10 A11 NC/
A
B
C
D
E
F
G
H
Note:
2. NC “no connect” - not connected internally to the die.
3. DNU pins are to be left floating or tied to Vss.
4. Ball G2 and H6 are the expansion pins for the 16Mb and 32Mb density resectively.
CG6258AM
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38-XXXXX
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CG6258AM Даташит, Описание, Даташиты
ADVANCE INFORMATION
CG6258AM
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................–65°C to + 150°C
Ambient Temperature with
Power Applied.............................................. –55°C to + 85°C
Supply Voltage to Ground Potential................. –0.4V to 4.6V
DC Voltage Applied to Outputs
in High Z State[5, 6, 7] ........................................–0.2V to 3.3V
DC Input Voltage[5, 6, 7].....................................–0.2V to 3.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .....................................................>200 mA
Operating Range[9]
Device
CG6258AM
Range
Industrial
Ambient Temperature
–25°C to +85°C
VCC
2.70V to 3.30V
Product Portfolio
Product
VCC Range (V)
Min.
Typ.[8]
Max.
Speed
(ns)
Power Dissipation
Operating ICC(mA)
f = 1MHz
Typ.[8] Max.
f = fmax
Typ.[8] Max.
Standby ISB2(µA)
Typ.[8] Max.
CG6258AM
2.70 3.0 3.30 70
2
4 13 17 55 80
Notes:
5. VIH(MAX) = VCC + 0.5V for pulse durations less than 20ns.
6. VIL(MIN) = -0.5V for pulse durations less than 20ns.
7. Overshoot and undershoot specifications are characterized and are not 100% tested.
8. Typical values are included for reference only and are not guranteed or tested. Typical values are measured at VCC = VCC (typ) and TA = 25C
9. VCC must be at minimal operational levels before inputs are turned ON.
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38-XXXXX
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Номер в каталогеОписаниеПроизводители
CG6258AM4Mb (256K x 16) Pseudo Static RAMWeida Semiconductor
Weida Semiconductor

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