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BCR16KM-12LC PDF даташит

Спецификация BCR16KM-12LC изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Triac».

Детали детали

Номер произв BCR16KM-12LC
Описание Triac
Производители Renesas Technology
логотип Renesas Technology логотип 

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BCR16KM-12LC Даташит, Описание, Даташиты
BCR16KM-12LC
Triac
Medium Power Use
Features
IT (RMS) : 16 A
VDRM : 600 V
IFGTI , IRGTI, IRGT : 50 mA
Viso : 2000 V
Outline
TO-220FN
1
23
REJ03G0328-0200
Rev.2.00
Dec.17.2004
The product guaranteed maximum junction
temperature 150°C.
Insulated Type
Planar Passivation Type
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Motor control, heater control
Maximum Ratings
www.DataSheet4U.com Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
700
Unit
V
V
Rev.2.00, Dec.17.2004, page 1 of 7









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BCR16KM-12LC Даташит, Описание, Даташиты
BCR16KM-12LC
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
16
96
38
5
0.5
10
2
– 40 to +150
– 40 to +150
2.0
2000
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 75°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Ι
ΙΙ
Gate trigger currentNote2
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltageNote4
IDRM
VTM
VFGTΙ
VRGTΙ
VRGTΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
VGD
Rth (j-c)
(dv/dt)c
0.2
10
— 2.0 mA Tj = 125°C, VDRM applied
— 1.75 V Tc = 25°C, ITM = 25 A,
Instantaneous measurement
— 1.5 V Tj = 25°C, VD = 6 V, RL = 6 ,
— 1.5 V RG = 330
— 1.5
V
— 50 mA Tj = 25°C, VD = 6 V, RL = 6 ,
— 50 mA RG = 330
— 50 mA
— — V Tj = 125°C, VD = 1/2 VDRM
— 3.4 °C/W Junction to caseNote3
— — V/µs Tj = 125°C
www.DaNtaoStheese: t42U..cMomeasurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 8 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
Rev.2.00, Dec.17.2004, page 2 of 7









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BCR16KM-12LC Даташит, Описание, Даташиты
BCR16KM-12LC
Performance Curves
Maximum On-State Characteristics
102
7
5
Tj = 25°C
3
2
101
7
5
3
2
100
7
5
3
2
10-1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
On-State Voltage (V)
Gate Characteristics (I, II and III)
102
7
5
3
2 VGM = 10 V
101
7
5
3 VGT = 1.5 V
2
PGM = 5 W
PG(AV) = 0.5 W
IGM = 2 A
100
7
5
3
2
10-1
101
23
IFGT I
IRGT II
IRGT III
5 7102 2 3
VGD = 0.2 V
5 7 103 2 3 5 7 104
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Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
103
7 Typical Example
5
3
2
102
7
5
3
2
101
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Rev.2.00, Dec.17.2004, page 3 of 7
Rated Surge On-State Current
120
100
80
60
40
20
0
100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60 Hz)
Gate Trigger Current vs.
Junction Temperature
103
7 Typical Example
5
IRGTIII
3
2
102
7 IFGTI
5
3
2
IRGTI
101
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
4.0102 2 3 5 7 103 2 3 5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60 Hz)










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