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WCMA1008C1X PDF даташит

Спецификация WCMA1008C1X изготовлена ​​​​«Weida Semiconductor» и имеет функцию, называемую «128K x 8 Static RAM».

Детали детали

Номер произв WCMA1008C1X
Описание 128K x 8 Static RAM
Производители Weida Semiconductor
логотип Weida Semiconductor логотип 

11 Pages
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WCMA1008C1X Даташит, Описание, Даташиты
WCMA1008C1X
Features
• Voltage Range
4.5V–5.5V
• Low active power
— Typical active current: 6 mA @ f = fmax (70 ns speed)
• Low standby current
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE1, CE2, and OE fea-
tures
• CMOS for optimum speed/power
Functional Description
The WCMA1008C1X is a high-performance CMOS static
RAM organized as 128K words by 8 bits. Easy memory expan-
sion is provided by an active LOW Chip Enable (CE1), an ac-
tive HIGH Chip Enable (CE2), an active LOW Output Enable
Logic Block Diagram
128K x 8 Static RAM
(OE), and three-state drivers. This device has an automatic
power-down feature that reduces power consumption by more
than 75% when deselected.
Writing to the device is accomplished by taking Chip Enable 1
(CE1) and Write Enable (WE) inputs LOW and Chip Enable 2
(CE2) input HIGH. Data on the eight I/O pins (I/O0 through
I/O7) is then written into the location specified on the address
pins (A0 through A16).
Reading from the device is accomplished by taking Chip En-
able 1 (CE1) and Output Enable (OE) LOW while forcing Write
Enable (WE) and Chip Enable 2 (CE2) HIGH. Under these
conditions, the contents of the memory location specified by
the address pins will appear on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE1
HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE1 LOW, CE2 HIGH, and WE LOW)
The WCMA1008C1X is available in a standard 32-pin
450-mil-wide body width SOIC and 32-pin TSOP type I.
www.DataSheet4U.com A0
A1
A2
A3
A4
A5
A6
A7
A8
CCEE21
WE
OE
INPUT BUFFER
512x 256x 8
ARRAY
COLUMN
DECODER
POWER
DOWN
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
Pin Configuration
Top View
SOIC
A17
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 A15
30 A18
29 WE
28 A13
27 A8
26
25
A9
A11
24 OE
23 A10
22 CE
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
AAAA111389
WE
CAE152
VNCCC
A16
AAA11427
A6
AA45
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TSOP I
Top View
(not to scale)
32 OE
31
30
29
28
27
AIIICI////OOOO1E607561
26
25
24
GII//OON43D
23
22
21
20
19
18
17
IIIAAAA///OOO1032 210
April 5, 2002









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WCMA1008C1X Даташит, Описание, Даташиты
WCMA1008C1X
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VCC to Relative GND ....... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] .....................................–0.5V to VCC +0.5V
DC Input Voltage[1]..................................–0.5V to VCC +0.5V
Current into Outputs (LOW) .........................................20 mA
Static Discharge Voltage...............................................2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .....................................................>200 mA
Product Portfolio
Product
WCMA1008C1X
VCC Range
Min.
Typ.[2]
Max.
4.5 V
5.0V
5.5V
Speed
70 ns
55 ns
Temp.
Ind’l
Power Dissipation
Operating, Icc
f = fmax
Typ.[2]
Max.
Standby (ISB2)
Typ.[2]
Max.
6 mA
7.5 mA
15 mA
20 mA
4 µA
20 µA
Operating Range
Industrial
Range
Ambient
Temperature
–40°C to +85°C
VCC
4.5V–5.5V
Notes:
www.Da21ta.. ShTVyeILpe(imct4ainUl .v).ac=lou–me2s.0VarfeormpeualsseudruerdataiotnVsCoCf le=s5sVth,aTnA2=0
ns.
25°C,
and
are
included
for
reference
only
and
are
not
tested
or
guaranteed.
Page 2 of 11









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WCMA1008C1X Даташит, Описание, Даташиты
WCMA1008C1X
Electrical Characteristics Over the Operating Range
Param-
eter
Description
VOH Output HIGH Voltage
VOL Output LOW Voltage
VIH Input HIGH Voltage
Test Conditions
VCC = Min., IOH = – 1 mA
VCC = Min., IOL = 2.1 mA
VIL Input LOW Voltage
IIX Input Leakage Current GND VI VCC
IOZ Output Leakage
Current
GND VI VCC, Output Dis-
abled
ICC VCC Operating
Supply Current
f=fMAX=1/tRC IOUT =0 mA
VCC = Max.,
ISB1 Automatic CE
Max. VCC,CE1VIH,CE2<VIH
Power-Down Current VIN VIH or VIN VIL, f = fMAX
—TTL Inputs
ISB2 Automatic CE
Max. VCC, CE1 VCC
Power-Down Current 0.3V,CE2 <0.3
—CMOS Inputs
VIN VCC – 0.3V, or VIN
0.3V, f =0
WCMA1008C1X-55
Min. Typ.[2] Max.
2.4
0.4
2.2 VCC
+0.3
–0.3 0.8
–1 +1
–1 +1
7.5 20
0.1 2
2.5 15
WCMA1008C1X-70
Min. Typ.[2] Max.
2.4
0.4
2.2 VCC
+0.3
–0.3 0.8
–1 +1
–1 +1
Units
V
V
V
V
µA
µA
6 15 mA
0.1 1 mA
15 µA
Capacitance[3]
Parameter
CIN
COUT
Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = 5.0V
Max.
9
9
Unit
pF
pF
AC Test Loads and Waveforms
www.DataSheet4U.com
R1 1800
5V
R1 1800
5V
OUTPUT
OUTPUT
100 pF
INCLUDING
JIG AND
SCOPE
(a)
R2
990
5 pF
INCLUDING
JIG AND
SCOPE
(b)
Equivalent to: THEVENIN EQUIVALENT
OUTPUT
639
1.77V
R2
990
3.0V
GND
3 ns
Note:
3. Tested initially and after any design or process changes that may affect these parameters.
ALL INPUT PULSES
90%
10%
90%
10%
3 ns
Page 3 of 11










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Номер в каталогеОписаниеПроизводители
WCMA1008C1X128K x 8 Static RAMWeida Semiconductor
Weida Semiconductor

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