DataSheet26.com

WCMA2008U1B PDF даташит

Спецификация WCMA2008U1B изготовлена ​​​​«Weida Semiconductor» и имеет функцию, называемую «256K x 8 Static RAM».

Детали детали

Номер произв WCMA2008U1B
Описание 256K x 8 Static RAM
Производители Weida Semiconductor
логотип Weida Semiconductor логотип 

11 Pages
scroll

No Preview Available !

WCMA2008U1B Даташит, Описание, Даташиты
WCMA2008U1B
WCMA2008U1B
Features
• High Speed
— 70ns availability
• Voltage range
— 2.7V–3.3V
• Ultra low active power
— Typical active current: 1 mA @ f = 1MHz
— Typical active current: 7 mA @ f = fmax (70ns speed)
• Low standby power
• Easy memory expansion withCE1,CE2,and OEfeatures
• Automatic power-down when deselected
• CMOS for optimum speed/power
Functional Description
The WCMA2008U1B is a high-performance CMOS static
RAM organized as 256K words by 8 bits. This device features
advanced circuit design to provide ultra-low active current.
This is device is ideal for portable applications. The device
also has an automatic power-down feature that significantly
Logic Block Diagram
256K x 8 Static RAM
reduces power consumption by 80% when addresses are not
toggling. The device can be put into standby mode reducing
power consumption by more than 99% when deselected (CE1
HIGH or CE2 LOW).
Writing to the device is accomplished by taking Chip Enable
(CE1) and Write Enable (WE) inputs LOW and Chip Enable 2
(CE 2) HIGH. Data on the eight I/O pins (I/O0 through I/O7) is
then written into the location specified on the address pins (A0
through A17).
Reading from the device is accomplished by taking Chip En-
able (CE1) and Output Enable (OE) LOW while forcing Write
Enable (WE) and Chip Enable 2 (CE2) HIGH. Under these
conditions, the contents of the memory location specified by
the address pins will appear on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE1
HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE1 LOW and CE2 HIGH and WE
LOW).
The WCMA2008U1B is available in a 36-ball FBGA package.
www.DataSheet4U.com
AAA120
AA34
AAA567
AAAA111890
CE 2 CE1
WE
OE
Data in Drivers
128K x 8
ARRAY
COLUMN
DECODER
POWER
DOWN
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7









No Preview Available !

WCMA2008U1B Даташит, Описание, Даташиты
WCMA2008U1B
Pin Configurations
FBGA (Top View)
12 3456
A0 A 1 CE 2 A3
A6 A8
I/O4 A2 WE A4 A7 I/O0
I/O5
VS S
DNU A5
I/O1
VCC
VCC VSS
I/O6
NC A17
I/O2
I/O7 OE CE1 A16 A15 I/O3
A9 A10 A11 A12 A13 A14
A
B
C
D
E
F
G
H
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied...............................................55°C to +125°C
Supply Voltage to Ground Potential..... ..........–0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State[1]........................................0.5V to VCC + 0.5V
DC Input Voltage[1]..................................–0.5V to VCC + 0.5V
Output Current into Outputs (LOW)............................20 mA
Static Discharge Voltage ..........................................>2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ......................................................>200 mA
Operating Range
Product
WCMA2008U1B
www.DataSheet4U.com
Range
Industrial
Ambient Temperature
–40°C to +85°C
VCC
2.7V to 3.3V
Product Portfolio
Power Dissipation (Industrial)
Product
VCC Range
Min.
Typ. [2]
Max.
Speed
Operating, ICC
f = 1 MHz
Typ.[2] Max.
f = fmax
Typ.[2] Max.
Standby (ISB2)
Typ.[2] Max.
WCMA2008U1B
2.7V
3.0V
3.3V
70 ns 1.5 mA 3 mA 7 mA 15 mA 2 µA
Notes:
1. VIL(min.) = –2.0V for pulse durations less than 20 ns.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.) , T A = 25°C.
10 µA
2









No Preview Available !

WCMA2008U1B Даташит, Описание, Даташиты
WCMA2008U1B
Electrical Characteristics Over the Operating Range
Param-
eter
Description
Test Conditions
VOH Output HIGH Voltage IOH = –1.0 mA VCC = 2.7V
VOL Output LOW Voltage IOL = 2.1 mA VCC = 2.7V
VIH Input HIGH Voltage
VIL Input LOW Voltage
IIX Input Leakage Current GND < VI < VCC
IOZ Output Leakage Current GND < VO < VCC, Output Disabled
ICC
VCC Operating Supply
f =fMAX = 1/tRC VCC = 3.3V
Current
f = 1 MHz
IOUT = 0 mA
CMOS Levels
ISB1 Automatic CE
CE1 > VCC – 0.2V or CE2 < 0.2V
Power-Down Current — VIN > VCC – 0.2V or VIN < 0.2V,
CMOS Inputs
f = fmax (Address and Data Only),
f = 0 (OE,WE)
ISB2 Automatic CE
CE1 > VCC – 0.2V or CE2 < 0.2V
Power-Down Current— VIN > VCC 0.2V or VIN < 0.2V,
CMOS Inputs
f = 0, VCC=3.3V
WCMA2008U1B-70
Min.
2.4
2.2
–0.3
–1
–1
Typ. [2]
Max.
0.4
VCC + 0.3V
0.8
+1
+1
7 15
1.5 3
2 10
Unit
V
V
V
V
µA
µA
mA
µA
Capacitance[3]
Parameter
CIN
COUT
Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,VCC = Vcc(typ)
Max.
6
8
Unit
pF
pF
www.DTathaSehremeta4Ul .Rcoemsistance
Description
Thermal Resistance[3]
(Junction to Ambient)
Thermal Resistance[3]
(Junction to Case)
Test Conditions
Still Air, soldered on a 4.25 x 1.125 inch, 4-layer print-
ed circuit board
Note:
3. Tested initially and after any design or process changes that may affect these parameters.
Symbol
ΘJA
ΘJ C
BGA
55
16
Unit
°C/W
°C/W
3










Скачать PDF:

[ WCMA2008U1B.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
WCMA2008U1B256K x 8 Static RAMWeida Semiconductor
Weida Semiconductor
WCMA2008U1X256K x 8 Static RAMWeida Semiconductor
Weida Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск