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WCMA4016U1X PDF даташит

Спецификация WCMA4016U1X изготовлена ​​​​«Weida Semiconductor» и имеет функцию, называемую «256K x 16 Static RAM».

Детали детали

Номер произв WCMA4016U1X
Описание 256K x 16 Static RAM
Производители Weida Semiconductor
логотип Weida Semiconductor логотип 

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WCMA4016U1X Даташит, Описание, Даташиты
Y62147BV
L™
WCMA4016U1X
Features
• Low voltage range: 2.7V–3.6V
• Ultra-low active, standby power
• Easy memory expansion with CE1 and CE2 and OE fea-
tures
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power
Functional Description[1]
The WCMA4016U1X is a high-performance CMOS static
RAM organized as 262,144 words by 16 bits. This device
features advanced circuit design to provide ultra-low active
current and standby current. This is ideal for providing more
battery life in portable applications such as cellular telephones.
The device also has an automatic power-down feature that
significantly reduces power consumption by 99% when
addresses are not toggling. The device can also be put into
standby mode when deselected (CE1 HIGH or CE2 LOW or
Logic Block Diagram
256K x 16 Static RAM
both BHE and BLE are HIGH). The input/output pins (I/O0
through I/O15) are placed in a high-impedance state when:
deselected (CE1HIGH or CE2 LOW), outputs are disabled (OE
HIGH), both Byte High Enable and Byte Low Enable are
disabled (BHE, BLE HIGH), or during a write operation (CE1
LOW, CE2 HIGH and WE LOW).
Writing to the device is accomplished by taking Chip Enables
(CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW.
If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0
through I/O7), is written into the location specified on the
address pins (A0 through A18). If Byte High Enable (BHE) is
LOW, then data from I/O pins (I/O8 through I/O15) is written into
the location specified on the address pins (A0 through A18).
Reading from the device is accomplished by taking Chip
Enables (CE1 LOW and CE2 HIGH) and Output Enable (OE)
LOW while forcing the Write Enable (WE) HIGH. If Byte Low
Enable (BLE) is LOW, then data from the memory location
specified by the address pins will appear on I/O0 to I/O7. If Byte
High Enable (BHE) is LOW, then data from memory will appear
on I/O8 to I/O15. See the truth table at the back of this
datasheet for a complete description of read and write modes.
Pin Configurations
FBGA (Top View)
12 34 56
A9
A8
A7
www.DaAta6Sheet4U.com
A5
A4
A3
A2
A1
A0
DATA IN DRIVERS
256K × 16
RAM Array
2048 × 2048
COLUMN DECODER
I/O0 – I/O7
I/O8 – I/O15
BLE OE A0 A1 A2 CE2
I/O8 BHE A3 A4 CE I/O0
I/O9 I/O10 A5 A6 I/O1 I/O2
VSS I/O11 A17 A7 I/O3 VCC
VCC I/O12 NC A16 I/O4 VSS
I/O14 I/O13 A14 A15 I/O5 I/O6
I/O15 NC A12 A13 WE I/O7
NC A8 A9 A10 A11 NC
A
B
C
D
E
F
G
H
Power -Down
Circuit
.
BHE
BLE
BHE
WE
OE
BLE
CE2
CE1
CE2
CE1
Weida Semiconductor, Inc.









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WCMA4016U1X Даташит, Описание, Даташиты
WCMA4016U1X
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground Potential ............... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State[1] ....................................–0.5V to VCC + 0.5V
DC Input Voltage[1].................................... −0.5V to VCC + 0.5V
Product Portfolio
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2100V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Device
WCMA4016U1X
Ambient
Range Temperature
Industrial –40°C to +85°C
VCC
2.7V to
3.6V
Product
WCMA4016U1X
VCC Range
VCC(min.) VCC(typ.)[2] VCC(max.)
2.7V
3.0V
3.6V
Power
LL
Speed
(ns)
70
Power Dissipation (Industrial)
Operating (ICC)
Standby (ISB2)
Typ.[2] Maximum Typ.[2] Maximum
7 mA
15 mA
2 µA
20 µA
Electrical Characteristics Over the Operating Range
Parameter
Description
VOH Output HIGH Voltage
VOL Output LOW Voltage
VIH Input HIGH Voltage
VIL Input LOW Voltage
IIX Input Load Current
IOZ Output Leakage Current
www.DaItCaSCheet4U.comCVCurCreOnpt erating Supply
ISB1 Automatic CE
Power-Down Current—
CMOS Inputs
ISB2 Automatic CE
Power-Down Current—
CMOS Inputs
Test Conditions
IOH = –1.0 mA
VCC = 2.7V
IOL = 2.1 mA
VCC = 2.7V
VCC = 3.6V
VCC = 2.7V
GND < VI < VCC
GND < VO < VCC, Output Disabled
IOUT = 0 mA,
f = fMAX = 1/tRC,
CMOS Levels
VCC = 3.6V
IOUT = 0 mA, f = 1 MHz,
CMOS Levels
CE1 > VCC0.3V, CE2< 0.3V
VIN>VCC–0.3V, VIN<0.3V)
f = fMAX (Address and Data
Only),
f = 0 (OE, WE, BHE and BLE),
VCC=3.60V
CE1 > VCC – 0.3V or CE2 <
0.3V,
VIN > VCC – 0.3V or VIN <
0.3V,
f = 0, VCC = 3.60V
LL
LL
WCMA4016U1X
Min.
Typ.[2]
Max.
2.4
0.4
2.2
–0.5
VCC + 0.5V
0.8
–1 ±1 +1
–1 +1 +1
7 15
Unit
V
V
V
V
µA
µA
mA
1 2 mA
2 20 µA
2 20 µA
Notes:
1. VIL(min.) = –2.0V for pulse durations less than 20 ns.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25°C.
2









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WCMA4016U1X Даташит, Описание, Даташиты
WCMA4016U1X
.
Capacitance[3]
Parameter
CIN
COUT
Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = VCC(typ.)
Max.
6
8
Thermal Resistance
Description
Thermal Resistance
(Junction to Ambient)[3]
Thermal Resistance
(Junction to Case)[3]
Test Conditions
Still Air, soldered on a 4.25 x 1.125 inch, 4-layer printed
circuit board
Symbol
ΘJA
ΘJC
BGA
55
16
AC Test Loads and Waveforms
Unit
pF
pF
Units
°C/W
°C/W
VCC
OUTPUT
R1
30 pF
INCLUDING
JIG AND
SCOPE
(a)
VCC
OUTPUT
R1
R2 5 pF
INCLUDING
JIG AND
SCOPE
(b)
VCC Typ
10%
R2 GND
Rise TIme: 1 V/ns
ALL INPUT PULSES
90%
90%
10%
Fall Time: 1 V/ns
(c)
Equivalent to:
THÉVENIN EQUIVALENT
OUTPUT
RTH
VTH
Parameters
www.DataSheet4U.com R1
R2
RTH
VTH
3.0V
1103
1554
645
1.75V
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
Min.
VDR VCC for Data Retention
1.0
ICCDR
Data Retention Current
VCC= 1.0V
CE1 > VCC – 0.3V, CE2 < 0.2V,
VIN > VCC – 0.3V or VIN < 0.3V
L
LL
tCDR[3]
Chip Deselect to Data
Retention Time
0
tR[4] Operation Recovery Time
70
Note:
3. Tested initially and after any design or process changes that may affect these parameters.
4. Full Device AC operation requires linear VCC ramp from VDR to VCC(min.) > 10 µs or stable at VCC(min.) >10 µs.
Unit
V
Typ.[2]
1
Max.
3.6
10
Unit
V
µA
ns
ns
3










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Номер в каталогеОписаниеПроизводители
WCMA4016U1X256K x 16 Static RAMWeida Semiconductor
Weida Semiconductor

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