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HN2A26FS PDF даташит

Спецификация HN2A26FS изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «Frequency General-Purpose Amplifier Applications».

Детали детали

Номер произв HN2A26FS
Описание Frequency General-Purpose Amplifier Applications
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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HN2A26FS Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN2A26FS
HN2A26FS
Frequency General-Purpose Amplifier Applications
Two devices are incorporated into a fine-pitch, Small-Mold (6-pin)
package.
High voltage: VCEO = 50 V
High current: IC = 100 mA (max)
High hFE: hFE = 120 to 400
Excellent hFE linearity
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Lead (Pb) - free
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
16
25
34
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Total rating.
Symbol
VCBO
VCEO
VEBO
IC
IB
PC(Note)
Tj
Tstg
Rating
50
50
5
100
30
50
150
55 ~ 150
Unit
V
V
V
mA
mW
mW
°C
°C
1. EMITTER1
(E1)
2. EMITTER2
(E2)
3. BASE2
(B2)
4. COLLECTOR2 (C2)
fS6 5. BASE1
(B1)
6. COLLECTOR1 (C1)
JEDEC
JEITA
TOSHIBA
2-1F1C
Weight: 0.001 g (typ.)
Electrical Characteristics (Ta = 25°C)
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Characteristic
Symbol
Test Condition
Collector cutoff current
ICBO
VCB = −50 V, IE = 0
Emitter cutoff current
IEBO
VEB = −5 V, IC = 0
DC current gain
hFE(Note) VCE = −6 V, IC = −2 mA
Collector-emitter saturation voltage
VCE (sat) IC = −100 mA, IB = −10 mA
Transition frequency
fT VCE = −10 V, IC = −1 mA
Collector output capacitance
Cob VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE Classification Y (F): 120 ~ 140, GR (H): 200 ~ 400
( ) Marking symbol
Min Typ. Max Unit
⎯ ⎯ −0.1 µA
⎯ ⎯ −0.1 µA
120 400
0.18 0.3
V
80 ⎯ ⎯ MHz
1.6 pF
Marking
PF
Type Name
hFE Rank
Equivalent Circuit (top view)
654
Q1 Q2
123
1
2005-04-11









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HN2A26FS Даташит, Описание, Даташиты
Q1, Q2 Common
IC - VCE
-120
-2.0 COMMON EMITTER Ta = 25°C
-100
-1.5
-1.0
-80
-0.7
-60 -0.5
-40 -0.3
-0.2
-20
IB = -0.1mA
-0
-00 -1 -2 -3 -4 -5 -6 -7
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
-1
COMMON EMITTER
IC/IB = 10
HN2A26FS
1000
hFE - IC
Ta = 100°C 25
100
-25
COMMON EMITTER
   VCE = 6V
   VCE = 1V
10
-0.1
-1 -10
COLLECTOR CURRENT IC (mA)
-100
VBE(sat) - IC
-10
COMMON EMITTER
IC/IB = 10
-0.1
-0.01
-0.1
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Ta = 100°C
25
-25
-1 -10
COLLECTOR CURRENT IC (mA)
-100
-1 -25
25 Ta = 100°C
-0.1
-0.1
-1 -10
COLLECTOR CURRENT IC (mA)
-100
-1000
IB - VBE
-100
-10
Ta = 100°C
25
-25
-1
-0.1
-00
COMMON EMITTER
VCE = 6V
-0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4
BASE-EMITTER VOLTAGE VBE (V)
2
100
90
80
70
60
50
40
30
20
10
0
0
PC - Ta
Mounted on FR4 board
     (10 mm × 10 mm × 1 mmt)
20 40 60 80 100 120 140 160 180
AMBIENT TEMPERATURE Ta (°C)
*:Total rating.
2005-04-11









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HN2A26FS Даташит, Описание, Даташиты
HN2A26FS
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
030619EAA
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
www.DataSheet4U.TcoOmSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and
sold, under any law and regulations.
3 2005-04-11










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Номер в каталогеОписаниеПроизводители
HN2A26FSFrequency General-Purpose Amplifier ApplicationsToshiba Semiconductor
Toshiba Semiconductor

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