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PDF NTP6412AN Data sheet ( Hoja de datos )
| Número de pieza | NTP6412AN | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
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NTB6412AN, NTP6412AN
N-Channel Power MOSFET
100 V, 58 A, 18.2 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain Cur-
rent RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation
RqJC
Steady TC = 25°C
State
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Range
VDSS
VGS
ID
PD
IDM
TJ, Tstg
100
$20
58
41
167
240
−55 to
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc,
IL(pk) = 44.7 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
IS 58
EAS 300
TL 260
Unit
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
www.DataSheet4U.com
Junction−to−Case (Drain) Steady State
Symbol
RqJC
Max
0.9
Unit
°C/W
Junction−to−Ambient (Note 1)
RqJA
33
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 0
1
http://onsemi.com
V(BR)DSS
100 V
RDS(ON) MAX
18.2 mW @ 10 V
ID MAX
(Note 1)
58 A
N−Channel
D
G
S
4
4
12
3
TO−220AB
CASE 221A
STYLE 5
12
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
Drain
NTP
6412ANG
AYWW
1
Gate
3
Source
NTB
6412ANG
AYWW
1
Gate
2
Drain
3
Source
2
Drain
6412AN = Specific Device Code
G = Pb−Free Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTB6412AN/D
1 page  
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
SINGLE PULSE
NTB6412AN, NTP6412AN
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 13. Thermal Response
1
10 100 1000
ORDERING INFORMATION
Device
NTB6412ANG
Package
D2PAK
(Pb−Free)
Shipping†
50 Units / Rail
NTB6412ANT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
NTP6412ANG
TO−220
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.DataSheet4U.com
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NTP6412AN.PDF ] | |
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