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PDF NTD6415AN Data sheet ( Hoja de datos )
| Número de pieza | NTD6415AN | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTD6415AN
N-Channel Power MOSFET
100 V, 23 A, 55 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation
RqJC
Steady TC = 25°C
State
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
VDSS
VGS
ID
PD
IDM
TJ, Tstg
100
$20
23
16
83
89
−55 to
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) =
23 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
IS
EAS
TL
23
79
260
Unit
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
www.DataSheet4U.com
Junction−to−Case (Drain) Steady State
Symbol
RqJC
Max
1.8
Unit
°C/W
Junction−to−Ambient (Note 1)
RqJA
39
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
http://onsemi.com
V(BR)DSS
100 V
RDS(on) MAX
55 mW @ 10 V
ID MAX
(Note 1)
23 A
N−Channel
D
G
4
12
3
DPAK
CASE 369AA
STYLE 2
S
4
1
2
3
IPAK
CASE 369D
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
4 Drain
1
Gate
2
Drain
3
Source
1
Gate
6415AN
Y
WW
G
= Device Code
= Year
= Work Week
= Pb−Free Package
2
Drain
3
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
November, 2009 − Rev. 0
1
Publication Order Number:
NTD6415AN/D
1 page  
NTD6415AN
10
1 D = 0.01
0.02
0.1
0.01
0.05
0.2
0.01
0.5
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 13. Thermal Response
1
10 100 1000
www.DataSheet4U.com
http://onsemi.com
5
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