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S6495 PDF даташит

Спецификация S6495 изготовлена ​​​​«Hamamatsu» и имеет функцию, называемую «(S6493 - S6495) Photodiode».

Детали детали

Номер произв S6495
Описание (S6493 - S6495) Photodiode
Производители Hamamatsu
логотип Hamamatsu логотип 

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S6495 Даташит, Описание, Даташиты
PHOTODIODE
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Photodiode array with amplifier
S6493/S6494 series
Photodiode arrays combined with a signal processing circuit chip
S6493 and S6494 series are Si photodiode arrays efficiently combined with a signal processing circuit. The signal processing circuit is formed on
a single chip by the CMOS process, and includes a shift register, clamp circuit, hold circuit and charge amplifier array, thus allowing a simplified
external circuit configuration.
The photocurrent from the photodiode array is fed to the charge amplifier connected to each element and is converted into a voltage.
The signal voltage is then sent to the clamp circuit and hold circuit, and is finally read out from the shift register in turn as a sequential video
signal. The signal readout is performed by means of the charge storage method, so the output is proportional to the amount of light exposure (the
product of incident light level and integration time). The vide output is a boxcar waveform which is low noise and easy to handle.
In addition, the readout gain can be selected from two levels by changing the voltage to the external input terminal. (The "high" gain is 10 times
that of the "low" gain.) S6493 and S6494 series ensure easy operation since they can operate from a 5 V supply, and yet offer a maximum data
rate of 250 kHz.
Features
Applications
l Four types are available
l Image or pattern recognition system
S6493-64: 0.8 mm pitch × 64 ch
S6493-128: 0.4 mm pitch × 128 ch
S6494-64: 1.6 mm pitch × 64 ch
S6494-128: 0.8 mm pitch × 128 ch
l Simultaneous integration by using a charge amplifier array
l Sequential readout with a shift register
l Integrated clamp circuit allows low noise and wide
dynamic range
l Two gain levels can be selected
l Operates from single 5 V supply input
l S6493 series:
Long active area can be configured by use of multiple arrays
phosphor screen type is also available for X-ray detection
l Custom designed element size and pitch available
l Dedicated driver circuits are available
s Mechanical specifications
Parameter
Element pitch
Element diffusion width
Element height
Number of elements
Active area length
*1: Refer to following figure
s Detail of elements
Symbol *1
P
W
H
-
-
S6493-64 S6493-128
0.8 0.4
0.6 0.25
0.8 0.4
64 128
51.2
S6494-64 S6494-128
1.6 0.8
1.3 0.6
1.6 0.8
64 128
102.4
Unit
mm
-
mm
W PHOTODIODE DIFFUSION AREA
P
KMPDC0072EA
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S6495 Даташит, Описание, Даташиты
s Absolute maximum ratings
Parameter
Supply voltage
Gain selection terminal voltage
Clock pulse voltage
Start pulse voltage
Reset pulse voltage
Hold pulse voltage
Sample pulse voltage
Clamp pulse voltage
Operating temperature *2
Storage temperature
*2: No condensation
Photodiode array with amplifier S6493/S6494 series
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Symbol
Vdd
Vgain
Vφ1, Vφ2
Vφst
Vφreset
Vφhold
Vφsample
Vφclamp
Topr
Tstg
Value
-0.3 to +7.0
-5 to +60
-10 to +70
Unit
V
°C
s Recommended terminal voltage
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
Vdd 4.8 5 5.2
Gain selection
Low gain
Vgain (L)
Vdd-0.2
Vdd
Vdd+0.2
terminal voltage
High gain
Vgain (H)
0
- 0.4
Clock pulse voltage
High level
Low level
Vφ1, Vφ2
Vdd-0.2
0
Vdd
-
Vdd+0.2
0.4
Start pulse voltage
High level
Low level
Vφst
Vdd-0.2
0
Vdd
-
Vdd+0.2
0.4
Reset pulse voltage
High level
Low level
Vφreset
Vdd-0.2
0
Vdd
-
Vdd+0.2
0.4
V
Hold pulse voltage
High level
Low level
Vφhold
Vdd-0.2
0
Vdd
-
Vdd+0.2
0.4
Sample pulse voltage
High level
Low level
Vφsample
Vdd-0.2
0
Vdd
-
Vdd+0.2
0.4
Clamp pulse voltage
High level
Low level
Vφclamp
Vdd-0.2
0
Vdd
-
Vdd+0.2
0.4
s Electrical characteristics (Ta=25 °C, Vdd=5 V, Vφ1=Vφ2=Vφreset=Vφhold=Vφclamp=Vφsample=5 V)
Parameter
Symbol
S6493-64, S6494-64
Min. Typ. Max.
S6493-128, S6494-128
Min. Typ. Max.
Clock pulse frequency (video data rate)
fφ1, fφ2
15
- 250 15
- 250
Integration time
Ts 0.3 - 10 0.6 - 10
Clock pulse line capacitance
Cφ1, Cφ2
-
15
-
- 30 -
Video line capacitance
Cv
- 20 -
- 40 -
Output impedance
Zo - 3 - - 3 -
Current consumption
Idd
- 20 -
- 40 -
Unit
kHz
ms
pF
k
mA
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S6495 Даташит, Описание, Даташиты
Photodiode array with amplifier S6493/S6494 series
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s Electrical and optical characteristics
Parameter
Symbol
S6493-64
Min. Typ. Max.
Spectral response range
λ 200 to 1000
Peak sensitivity wavelength
λp - 720 -
Dark output
voltage *3
High gain
Low gain
Vd
- 0.4 4
- 0.04 0.4
Saturation output voltage *3
Vsat 1.3 1.6 -
S6493-128
Min. Typ. Max.
200 to 1000
- 720 -
- 0.2 2
- 0.02 0.2
1.3 1.6 -
S6494-64
Min. Typ. Max.
320 to 1000
- 720 -
- 0.8 8
- 0.08 0.8
1.3 1.6 -
S6494-128
Min. Typ. Max.
320 to 1000
- 720 -
- 0.4 4
- 0.04 0.4
1.3 1.6 -
Unit
nm
mV
V
Saturation
exposure *4, 5
High gain
Low gain
Esat
- 1.2 -
- 12 -
- 5.8 -
- 58 -
- 0.28 -
- 2.8 -
- 1.2 -
mlx·s
- 12 -
Photo sensitivity *5 High gain
Low gain
S
- 1300 -
- 130 -
- 270 -
- 27 -
- 5700 -
- 570 -
- 1300 -
- 130 -
V/lx·s
Photo response non-uniformity *6 PRNU -
- 20 -
- 20 -
- 20 -
- 20
%
Noise *7
High gain
Low gain
N
- 0.2 -
- 0.2 -
- 0.2 -
- 0.2 -
- 0.3 -
- 0.2 -
- 0.3 -
mVrms
- 0.2 -
Output offset voltage *8
Vos 2.5 3 3.5 2.5 3 3.5 2.5 3 3.5 2.5 3 3.5 V
[Ta=25 °C, Vdd=5 V, Vφ1=Vφ2=Vφreset =Vφhold =Vφclamp =Vφsample=5 V, Vgain=5 V (Low gain), 0 V (High gain),
Data rate: 200 kHz]
*3: Integration time ts=1 ms
*4: Saturation output voltage and exposure are determined by the upper limit of the charge amplifier.
*5: Measured with a 2856 K tungsten lamp.
*6: When the photodiode array is exposed to uniform light which is 50 % of the saturation exposure, the Photo Response Non-
Uniformity (PRNU) is defined as follows:
PRNU = (Vmax - Vmin)/Vaverage × 100 (%)
where Vaverage is the average output of all elements, Vmax is the output of the element that provides the maximum output,
Vmin is the output of the element that provides the minimum output.
*7: Measured at a data rate of 50 kHz and integration time of 5 ms under dark condition.
*8: The output offset voltage is defined as shown in following figure (Output waveform of one element).
s Output waveform of one element
s Spectral response
SATURATION STATE
(Typ. Ta =25 ˚C)
0.4
SATURATION OUTPUT
VOLTAGE
Vsat=1.6 V Typ.
0.3 S6493 SERIES
0.2
DARK STATE 120 mV Typ.
OFFSET VOLTAGE
VOS=3 V Typ.
GND
KMPDC0077EA
0.1
0
190
S6494 SERIES
400 600
800
WAVELENGTH (nm)
1000
KMPDB0041EA
s Driver circuit consideration
The following points must be taken into account when you use a driver circuit.
q The input pulse must meet the pulse conditions at the input terminal. Each pulse should be amplified by the buffer at a
position as close to the input terminal as possible.
q The video output should undergo non-inverting amplification at the external readout circuit.
q Use of a JFET input type op amp is recommended. Make offset adjustment as necessary. In this case, it should be
noted that the dark output level appears on the lower voltage side relative to the output offset voltage.
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