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PDF HMC784MS8GE Data sheet ( Hoja de datos )
| Número de pieza | HMC784MS8GE | |
| Descripción | GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v00.0808
HMC784MS8GE
www.DataSheet4U.com
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
Typical Applications
The HMC784MS8GE is ideal for:
• Cellular / 4G Infrastructure
• WiMAX, WiBro & Fixed Wireless
• Automotive Telematics
• Mobile Radio
• Test Equipment
Functional Diagram
11
Features
Input P1dB: +40 dBm @ Vdd = +8V
High Third Order Intercept: +62 dBm
Positive Control: +3 to +8 V
Low Insertion Loss: 0.4 dB
MSOP8G Package: 14.8 mm2
General Description
The HMC784MS8GE is a high power SPDT switch in
an 8-lead MSOPG package for use in transmit-rece-
ive applications which require very low distortion at
high input signal power levels. The device can con-
trol signals from DC to 4 GHz. The design provides
exceptional intermodulation performance; > +60 dBm
third order intercept at +5V bias. RF1 and RF2 are
reflective shorts when “OFF”. On-chip circuitry allows
single positive supply operation from +3 Vdc to +8 Vdc
at very low DC current with control inputs compatible
with CMOS and most TTL logic families.
11 - 224
Electrical Specifications,
TA = +25° C, Vctl = 0/Vdd, Vdd = +5V (Unless Otherwise Stated), 50 Ohm System
Parameter
Frequency
Min.
Typ.
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 4.0 GHz
0.4
0.6
0.8
0.9
1.3
Isolation
DC - 4.0 GHz
26
30
Return Loss (On State)
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
35
30
20
10
Input Power for 0.1dB Compression
Vdd = +3V
Vdd = +5V
Vdd = +8V
0.1 - 4.0 GHz
32
37
38
Input Power for 1dB Compression
Vdd = +3V
Vdd = +5V
Vdd = +8V
0.1 - 4.0 GHz
32
35
38
35
38
41
Input Third Order Intercept
(Two-tone input power = +30 dBm each tone)
0.02 - 0.1 GHz
0.1 - 2.0 GHz
0.1 - 3.0 GHz
0.1 - 4.0 GHz
42
62
61
60
Switching Characteristics
tRISE, tFALL (10/90% RF) DC - 4.0 GHz
tON, tOFF (50% CTL to 10/90% RF)
15
40
Max.
0.6
0.8
1.1
1.3
2.0
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
ns
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
v00.0808
Bias Voltage & Current
Vdd (V)
+3
+5
+8
Typical Idd (μA)
0.5
2
20
Truth Table
Control Input (Vctl)
AB
High
Low
Low High
Signal Path State
RFC to RF1 RFC to RF2
Off On
On Off
HMC784MS8GEwww.DataSheet4U.com
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
Control Voltages & Currents
State
Low (0 to +0.2V)
High (Vdd ±0.2V)
Vdd = +3V
(μA)
0.5
0.1
Vdd = +5V
(μA)
2
0.1
Vdd = +8V
(μA)
20
0.1
11
Absolute Maximum Ratings
RF Input Power (Vdd = +8V,
+39 dBm (T = +85 °C)
50 Ohm source & load impedances)
Supply Voltage Range
(Vdd) (Vctl = 0V)
-0.2 to +9V
Control Voltage Range (A & B)
-0.2 to Vdd +0.5V
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 25 mW/°C above 85 °C)
1.217 W
Thermal Resistance
(Channel to ground paddle)
53.4 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Rating
Class 1A HBM
Note: DC blocking capacitors are required at ports RFC,
RF1 and RF2. Their value will determine the lowest trans-
mission frequency.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
11 - 228
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC784MS8GE.PDF ] | |
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