NTMS4176P PDF даташит
Спецификация NTMS4176P изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTMS4176P |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
5 Pages
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NTMS4176P
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Power MOSFET
-30 V, -9.6 A, P-Channel, SOIC-8
Features
•ăLow RDS(on) to Minimize Conduction Losses
•ăLow Capacitance to Minimize Driver Losses
•ăOptimized Gate Charge to Minimize Switching Losses
•ăSOIC-8 Surface Mount Package Saves Board Space
•ăThis is a Pb-Free Device
Applications
•ăLoad Switches
•ăNotebook PC's
•ăDesktop PC's
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol Value
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA (Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJA t < 10 s
(Note 1)
TA = 25°C
TA = 70°C
TA = 25°C
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
TA = 25°C
TA = 70°C
Power Dissipation
RqJA t < 10 s (Note 1)
Pulsed Drain Current
TA = 25°C
TA = 25°C,
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
ID
PD
IDM
TJ, TSTG
-30
±25
-7.3
-5.8
1.44
-5.5
-4.4
0.81
-9.6
-7.7
2.5
-39
-55 to
+150
V
V
A
W
A
W
A
W
A
°C
Source Current (Body Diode)
Single Pulse Drain-to-Source Avalanche
Energy TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 15 Apk, L = 1.0 mH, RG = 25 W
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS
EAS
-2.1
112.5
A
mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
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V(BR)DSS
-30 V
RDS(on) Max
18 mW @ -10 V
30 mW @ -4.5 V
ID Max
-9.6 A
P-Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
8
1
SOIC-8
CASE 751
STYLE 12
D DDD
8
4176P
AYWW
G
1
S SSG
4176P = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTMS4176PR2G SOIC-8 2500/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 0
1
Publication Order Number:
NTMS4176P/D
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NTMS4176P
THERMAL RESISTANCE RATINGS
Rating
Symbol
Junction-to-Ambient – Steady State (Note 3)
RqJA
Junction-to-Ambient – t≤10 s (Note 3)
RqJA
Junction-to-FOOT (Drain)
RqJF
Junction-to-Ambient – Steady State (Note 4)
RqJA
3. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
4. Surface-mounted on FR4 board using the minimum recommended pad size.
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Max Unit
87
50
°C/W
22
154
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)jk
Characteristic
Symbol
Test Condition
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage Tem‐
perature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = -250 mA
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V,
VDS = -24 V
TJ = 25°C
TJ = 85°C
VDS = 0 V, VGS = ±25 V
Gate Threshold Voltage
Negative Threshold Temperature Coeffi‐
cient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = -250 mA
Drain-to-Source On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = -10 V
ID = -9.6 A
VGS = -4.5 V
ID = -7.5 A
VDS = -1.5 V, ID = -9.6 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
Gate Resistance
SWITCHING CHARACTERISTICS (Note 6)
RG
VGS = 0 V, f = 1.0 MHz,
VDS = -24 V
VGS = -4.5 V, VDS = -15 V,
ID = -9.6 A
VGS = -10 V, VDS = -15 V,
ID = -9.6 A,
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DRAIN-TO-SOURCE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = -10 V, VDD = -15 V,
ID = -1.0 A, RG = 6.0 W
Forward Diode Voltage
VSD
VGS = 0 V
TJ = 25°C
ID = -2.1 A
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
Ta VGS = 0 V, dIS/dt = 100 A/ms,
Tb IS = -2.1 A
Reverse Recovery Time
QRR
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min Typ Max Unit
-30
29
V
mV/°C
-1.0
-5.0
±100
mA
nA
-1.5 -2.5 V
6.0 mV/°C
14 18
23 30
21.5
mW
S
1720
370
256
17
2.0
6.0
8.4
32.6
3.0
4.5
pF
nC
nC
W
15
9.0
ns
19.5
42.5
-0.75
0.59
32.4
14
18.4
23
-1.0
V
ns
nC
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NTMS4176P
TYPICAL PERFORMANCE CURVES
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20
-10V
18 -5 V
16 -4.5 V
14 -4.2 V
-4 V
12
-3.8 V
10
TJ = 25°C
-3.6 V
-3.4 V
8 -3.2 V
6
4 -3.0 V
2 -2.8 V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
20
18 VDS ≥ 10 V
16
14
12
10
8
6
4
2
0
1.5
TJ = 125°C
TJ = 25°C
TJ = -55°C
2.5 3.5 4.5
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.13
0.11
0.09
0.07
0.05
0.03
TJ = 25°C
ID = -9.6 A
0.030
TJ = 25°C
0.025
0.020
0.015
VGS = -4.5 V
VGS = -10 V
0.01
2
46
8
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
0.010
2
4 6 8 10 12 14 16 18
-ID, DRAIN CURRENT (AMPS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
1.6
ID = -9.6 A
VGS = -10 V
1.4
10000
VGS = 0 V
1.2 TJ = 150°C
1000
1.0
0.8 TJ = 125°C
0.6
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On-Resistance Variation with
Temperature
100
5
10 15 20 25 30
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
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