|
|
PDF NTMS4404N Data sheet ( Hoja de datos )
| Número de pieza | NTMS4404N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NTMS4404N (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
NTMS4404N
Power MOSFET
30 V, 12 A, Single N−Channel, SO−8
Features
• High Density Power MOSFET with Ultra Low RDS(on) for Higher
Efficiency
• Miniature SO−8 Surface Mount Package Saving Board Space
• IDSS Specified at Elevated Temperature
• Diode Exhibits High Speed, Soft Recovery
Applications
• Power Management for Battery Power Products
• Portable Products
• Computers, Printers, PCMCIA Cards
• Cell Phones, Cordless Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
tp v10 s
TA = 25°C
TA = 70°C
TA = 25°C
Steady State
tp v10 s
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
30
$20
9.6
7.6
12
1.56
2.5
7.0
5.6
0.83
V
V
A
W
A
W
Pulsed Drain Current tp = 10 ms, DC = 2 %
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 20 V, VGS = 5 V, IPK = 7.25 A,
L = 19 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
IS
EAS
TL
50
−55 to
150
6.0
500
A
°C
A
mJ
260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
80 °C/W
Junction−to−Ambient – t = 1 0 s (Note 1)
RqJA
50
Junction−to−Ambient – Steady State (Note 2)
RqJA
150
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad
size (Cu area = 0.412 in sq.)
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
30 V
RDS(on) TYP
9.7 mW @ 10 V
15.5 mW @ 4.5 V
ID MAX
12 A
N−Channel
D
G
S
1
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Gate
Drain
Drain
Top View
E4404N = Device Code
L = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NTMS4404NR2 SO−8
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
November, 2003 − Rev. 1
1
Publication Order Number:
NTMS4404N/D
1 page  
1000
DUTY CYCLE
100 D = 0.5
0.2
10
0.1
0.05
0.02
0.01
1
SINGLE PULSE
0.1
1E−05
1E−04
NTMS4404N
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
www.DataSheet4U.com
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJA(t) = r(t) RθJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RθJA(t)
1E−03
1E−02
1E−01
t, TIME (seconds)
1E+00
1E+01
1E+02
1E+03
Figure 12. Thermal Response − Various Duty Cycles
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTMS4404N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTMS4404N | Power MOSFET ( Transistor ) | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |