NTMS4840N PDF даташит
Спецификация NTMS4840N изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTMS4840N |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
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NTMS4840N
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Power MOSFET
30 V, 7.5 A, Single N−Channel, SOIC−8
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• SOIC−8 Surface Mount Package Saves Board Space
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA (Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJA t < 10 s
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 25°C
TA = 70°C
VDSS
VGS
ID
PD
ID
PD
ID
30
±20
5.5
4.4
1.14
4.5
3.5
0.68
7.5
6.0
Unit
V
V
A
W
A
W
A
Power Dissipation
RqJA t < 10 s (Note 1)
TA = 25°C
Pulsed Drain Current
TA = 25°C,
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 7.5 Apk, L = 1.0 mH, RG = 25 W
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
THERMAL RESISTANCE RATINGS
PD
IDM
TJ, TSTG
IS
EAS
TL
1.95
38
−55 to
+150
2.0
28
260
W
A
°C
A
mJ
°C
Rating
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
110
Junction−to−Ambient – t≤10 s (Note 1)
Junction−to−FOOT (Drain)
RqJA
RqJF
64
40
°C/W
Junction−to−Ambient – Steady State (Note 2)
RqJA
183.5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
September, 2009 − Rev. 1
1
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V(BR)DSS
30 V
RDS(on) Max
24 mW @ 10 V
36 mW @ 4.5 V
ID Max
7.5 A
N−Channel
D
G
1
SO−8
CASE 751
STYLE 12
S
MARKING DIAGRAM
& PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
S4840 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTMS4840NR2G SOIC−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMS4840N/D
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NTMS4840N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)jk
Characteristic
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Tem-
perature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 100°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coeffi-
cient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 10 V
ID = 6.9 A
VGS = 4.5 V
ID = 5.0 A
VDS = 1.5 V, ID = 6.9 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V, ID = 6.9 A
VGS = 10 V, VDS = 15 V, ID = 6.9 A
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−TO−SOURCE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = 10 V, VDD = 15 V,
ID = 1.0 A, RG = 3.0 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
PACKAGE PARASITIC VALUES
VSD
tRR
Ta
Tb
QRR
VIDG=S
=0
2.0
V
A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 2.0 A
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.5
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Typ Max Unit
V
18 mV/°C
1.0
10
±100
mA
nA
3.0 V
6.0 mV/°C
16 24
26 36 mW
15 S
520
140 pF
70
4.8
1.1
2.1 nC
1.9
9.5 nC
7.6
5.0
17 ns
3.0
0.77 1.0
0.58
12.5
7.3
5.2
6.0
V
ns
nC
0.66
0.20
1.50
2.0 3.0
nH
nH
nH
W
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NTMS4840N
TYPICAL PERFORMANCE CURVES
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12
10V
10
4.5 V
4.2 V
4V
8 3.8 V
TJ = 25°C
3.4 V
6
3.2 V
4
3.0 V
2
2.8 V
00
2.6 V
1.0 2.0 3.0 4.0 5.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
32
28 VDS ≥ 10 V
24
20
16
12
8 TJ = 125°C
4 TJ = 25°C
TJ = −55°C
01.5 2 2.5 3 3.5 4 4.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.060
0.055
0.050
TJ = 25°C
ID = 6.9 A
0.045
0.040
0.035
0.030
0.025
0.020
0.0153
4567
89
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.030
0.028
TJ = 25°C
0.026
0.024
VGS = 4.5 V
0.022
0.020
0.018
0.016
VGS = 10 V
0.0142
3.5 5 6.5 8 9.5 11 12.5 14
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.65
1.55
1.45
ID = 7.5 A
VGS = 10 V
1.35
1.25
1.15
1.05
0.95
0.85
0.75
0.65
−50
−25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100000
10000
1000
150 100 5
VGS = 0 V
TJ = 150°C
TJ = 125°C
10 15 20 25 30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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