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NTMS4873NF PDF даташит

Спецификация NTMS4873NF изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTMS4873NF
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTMS4873NF Даташит, Описание, Даташиты
NTMS4873NF
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Power MOSFET
30 V, 11.5 A, NChannel, SO8
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Includes SyncFET Schottky Diode
Optimized Gate Charge to Minimize Switching Losses
SOIC8 Surface Mount Package Saves Board Space
This is a PbFree Device
Applications
Synchronous FET for DCDC Converters
Low Side Notebook NonVCORE Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
DraintoSource Voltage
VDSS
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
TA = 70°C
VGS
ID
Power Dissipation
(Note 1)
RqJA
TA = 25°C
PD
Value
30
±20
8.9
7.2
1.39
Continuous Drain
Current RqJA (Note 2)
Steady
TA = 25°C
TA = 70°C
ID
7.1
5.7
Power Dissipation
(Note 2)
RqJA
State
TA = 25°C
PD
0.87
Continuous Drain
C(Nuortreen1t)RqJA, t v 10 s
TA = 25°C
TA = 70°C
ID
11.5
9.2
Power Dissipation
RqJA, t v 10 s(Note 1)
TA = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 11 Apk, L = 1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
PD 2.31
IDM 56
TJ, 55 to
Tstg 150
IS 3.3
EAS 60.5
TL 260
Unit
V
V
A
W
A
W
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoAmbient – Steady State (Note 1)
JunctiontoAmbient – t v 10 s (Note 1)
RqJA
RqJA
89.9 °C/W
54.2
JunctiontoFoot (Drain)
RqJF
35.6
JunctiontoAmbient – Steady State (Note 2)
RqJA
143
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 2 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
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V(BR)DSS
30 V
RDS(ON) MAX
12 mW @ 10 V
15 mW @ 4.5 V
ID MAX
11.5 A
NChannel
D
G
S
1
SO8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4873NF = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMS4873NFR2G SO8 2500/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
January, 2009 Rev. 1
1
Publication Order Number:
NTMS4873NF/D









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NTMS4873NF Даташит, Описание, Даташиты
NTMS4873NF
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V, VDS = 24 V TJ = 25°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 8.5 A
VDS = 1.5 V, ID = 10 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 4)
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V, ID = 10 A
VGS = 10 V, VDS = 15 V, ID = 10 A
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 15 V,
ID = 1.0 A, RG = 6.0 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V, IS = 3.5 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 10 A
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
3. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.45
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Typ Max Unit
V
10 mV/°C
250
±100
mA
nA
2.5 V
6 mV/°C
9 12 mW
12 15
22 S
1275
345
145
10.5
1.3
3.7
3.9
21.4
1900
525
225
16
6.0
6.5
32
pF
nC
nC
9.8 16 ns
3.8 7.0
22.3 45
14.3 25
0.55 0.7 V
0.5
20 35 ns
9.5 15
10.6 20
9.0 14 nC
0.66 nH
0.20 nH
1.5 nH
1.5 3.0 W
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NTMS4873NF Даташит, Описание, Даташиты
NTMS4873NF
TYPICAL CHARACTERISTICS
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25 10 V
20
15
5V
4.5 V
4.2 V
4V
3.5 V
10
VGS = 3.2 V
3V
5 2.8 V
2.6 V
0 2.4 V
0 0.5 1.0 1.5 2.0 2.5
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
40
VDS 10 V
30
20
TJ = 125°C
10 TJ = 25°C
TJ = 55°C
0
1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.045
0.035
0.025
0.015
ID = 10 A
0.015
0.013
TJ = 25°C
0.011
0.009
0.007
VGS = 4.5 V
VGS = 10 V
0.005
34 5 6 7 8 9
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. GatetoSource
Voltage
10
0.005
2.5
7.5
12.5 17.5 22.5
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
1.5
1.4
ID = 11.5 V
VGS = 10 V
1.3
1.2
100 M
VGS = 0 V
10 M
TJ = 125°C
1.1 TJ = 100°C
1.0 1 M
0.9
0.8
0.7 0.1 M
50 25 0 25 50 75 100 125 150
2.5
7.5
12.5 17.5 22.5 27.5
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
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