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HBA144ES6R PDF даташит

Спецификация HBA144ES6R изготовлена ​​​​«Cystech Electonics» и имеет функцию, называемую «Dual NPN Digital Transistors».

Детали детали

Номер произв HBA144ES6R
Описание Dual NPN Digital Transistors
Производители Cystech Electonics
логотип Cystech Electonics логотип 

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HBA144ES6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
Dual NPN Digital Transistors
HBC144ES6R
wSpwewc..DNao.ta: SCh3e7e2tS46UR.com
Issued Date : 2003.05.23
Revised Date :
Page No. : 1/4
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.
Two DTC144E chips in a SOT-363 package.
Mounting by SOT-323 automatic mounting machines is possible.
Mounting cost and area can be cut in half.
Transistor elements are independent, eliminating interference
Complements the HBA144ES6R
Equivalent Circuit
HBC144ES6R
SOT-363R
RBE2
RB2
TR1
RB1
RBE1
TR2
RB1=47k, RB2=47 k
RBE1=47k, RBE2=47 k
HBC144ES6R
CYStek Product Specification









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HBA144ES6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor, Ta=25)
wSpwewc..DNao.ta: SCh3e7e2tS46UR.com
Issued Date : 2003.05.23
Revised Date :
Page No. : 2/4
Parameter
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Limits
50
-10~+12
100
100
200 (Note)
150
-55~+150
Unit
V
V
mA
mA
mW
°C
°C
Note : 150mW per element must not be exceeded.
Characteristics (Each Transistor, Ta=25)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
-
3
-
-
-
68
32.9
0.8
-
Typ. Max. Unit
Test Conditions
- 0.5 V VCC=5V, IO=100uA
- - V VO=0.3V, IO=2mA
0.1 0.3 V IO/II=10mA/0.5mA
- 0.18 mA VI=5V
- 0.5 uA VCC=50V, VI=0V
- - - VO=5V, IO=5mA
47 61.1 k-
1 1.2 - -
250 - MHz VCE=10V, IC=5mA, f =100MHz *
* Transition frequency of the device
HBC144ES6R
CYStek Product Specification









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HBA144ES6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
Characteristic Curves
wSpwewc..DNao.ta: SCh3e7e2tS46UR.com
Issued Date : 2003.05.23
Revised Date :
Page No. : 3/4
DC Current Gain vs Output Current
1000
Output Voltage vs Output Current
1000
100
Vo=5V
10
1
0.1 1 10 100
Output Current --Io(mA)
100
10
1
Io/Ii=20
10
Output Current ---Io(mA)
100
Input Voltage vs Output Current (ON Characteristics)
10
Vo=0.3V
Output Current vs Input Voltage (OFF Characteristics)
10
Vcc=5V
11
0.1
0.1
1 10
Output Current --- Io(mA)
100
250
200
150
100
50
0
0
Power Derating Curves
Dual
Single
50 100 150
Ambient Temperature---TA(℃ )
200
HBC144ES6R
0.1
0.1
1
Input Voltage --- Vi(off)(V)
10
CYStek Product Specification










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Номер в каталогеОписаниеПроизводители
HBA144ES6RDual NPN Digital TransistorsCystech Electonics
Cystech Electonics
HBA144ES6RDual NPN Digital TransistorsCystech Electonics
Cystech Electonics

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