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HBA114TN6R PDF даташит

Спецификация HBA114TN6R изготовлена ​​​​«Cystech Electonics» и имеет функцию, называемую «Dual NPN Digital Transistors».

Детали детали

Номер произв HBA114TN6R
Описание Dual NPN Digital Transistors
Производители Cystech Electonics
логотип Cystech Electonics логотип 

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HBA114TN6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
Dual NPN Digital Transistors
HBC114TS6R
wSpwewc..DNao.ta: SCh3e5e3tS46UR.com
Issued Date : 2003.05.23
Revised Date :
Page No. : 1/4
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.
Two DTC114T chips in a SOT-363 package.
Mounting by SOT-323 automatic mounting machines is possible.
Mounting cost and area can be cut in half.
Transistor elements are independent, eliminating interference
Complements the HBA114TN6R
Equivalent Circuit
HBC114TS6R
SOT-363R
RB2
TR1
TR2
RB1
RB1=10k, RB2=10 k
HBC114TS6R
CYStek Product Specification









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HBA114TN6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor,Ta=25)
wSpwewc..DNao.ta: SCh3e5e3tS46UR.com
Issued Date : 2003.05.23
Revised Date :
Page No. : 2/4
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
50
50
5
100
200 (Note)
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
Note: 150mW per element must not be exceeded.
Characteristics (Each Transistor, Ta=25)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation
Voltage
DC Current Gain
Input Resistance
Transition Frequency
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min. Typ. Max. Unit
Test Conditions
50 -
- V IC=50µA
50 -
- V IC=1mA
5-
- V IE=50µA
- - 0.5 µA VCB=50V
- - 0.5 µA VEB=4V
- - 0.3 V IC=10mA, IB=1mA
100 - 600 - VCE=5V, IC=1mA
7 10 13 k-
- 250 - MHz VCE=10V, IC=5mA, f =100MHz *
* Transition frequency of the device
HBC114TS6R
CYStek Product Specification









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HBA114TN6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
Characteristic Curves
wSpwewc..DNao.ta: SCh3e5e3tS46UR.com
Issued Date : 2003.05.23
Revised Date :
Page No. : 3/4
DC Current Gain vs Collector Current
1000
Saturation Voltage vs Collector Current
1000
100
10
0.1
HFE@VCE=5V
1 10
Collector Current ---IC(mA)
100
250
200
150
100
50
0
0
Power Derating Curves
Dual
Single
50 100 150
Ambient Temperature---TA(℃)
200
100
10
1
VCE(SAT)@IC=10IB
10
Collector Current ---IC(mA)
100
HBC114TS6R
CYStek Product Specification










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Номер в каталогеОписаниеПроизводители
HBA114TN6RDual NPN Digital TransistorsCystech Electonics
Cystech Electonics
HBA114TN6RDual NPN Digital TransistorsCystech Electonics
Cystech Electonics

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