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Datasheet NDD05N50Z Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NDD05N50Z | N-Channel Power MOSFET, Transistor NDF05N50Z, NDP05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.25 W
Features
• • • •
Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant
http://onsemi.com
VDSS 500 V RDS(on) (TYP) @ 2.2 A 1.25 W
ABSOLUTE MAXIMUM | ON Semiconductor | mosfet |
NDD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NDD01N60 | N-Channel Power MOSFET, Transistor NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Stea ON Semiconductor mosfet | | |
2 | NDD01N60-1G | N-Channel Power MOSFET, Transistor NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Stea ON Semiconductor mosfet | | |
3 | NDD01N60T4G | N-Channel Power MOSFET, Transistor NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Stea ON Semiconductor mosfet | | |
4 | NDD02N40 | N-Channel Power MOSFET, Transistor NDD02N40, NDT02N40
N-Channel Power MOSFET 400 V, 5.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD NDT Unit
Drain−to−Source Voltage Gate−to� ON Semiconductor mosfet | | |
5 | NDD02N60Z | N-Channel Power MOSFET, Transistor NDF02N60Z, NDD02N60Z
N-Channel Power MOSFET 600 V, 4.8 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise n ON Semiconductor mosfet | | |
6 | NDD03N40Z | N-Channel Power MOSFET, Transistor NDD03N40Z, NDT03N40Z
N-Channel Power MOSFET 400 V, 3.4 W
Features
• 100% Avalanche Tested • Extremely High dv/dt Capability • Gate Charge Minimized • Very Low Intrinsic Capacitance • Improved Diode Reverse Recovery Characteristics • Zener−protected • These Devices are Pb-Free, Halo ON Semiconductor mosfet | | |
7 | NDD03N50Z | N-Channel Power MOSFET, Transistor DataSheet.in
NDD03N50Z N-Channel Power MOSFET 500 V, 3.3 W
Features
• • • •
Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
http://onsemi.com
VDSS 500 V RDS(on) (MAX) @ 1.15 A 3.3 W
ABSOLUTE MAXIMUM RATING ON Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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