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PDF NDP05N50Z Data sheet ( Hoja de datos )
| Número de pieza | NDP05N50Z | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
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NDF05N50Z, NDP05N50Z,
NDD05N50Z
www.DataSheet4U.com
N-Channel Power MOSFET
500 V, 1.25 W
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF NDP NDD Unit
Drain−to−Source Voltage
Continuous Drain Current RqJC
VDSS
ID
500
5
(Note 1)
5
V
4.7 A
Continuous Drain Current
RqJC, TA = 100°C
Pulsed Drain Current, VGS @
10 V
ID 3.2 3.2 3 A
(Note 1)
IDM 20 20 19 A
(Note 1)
Power Dissipation RqJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
ID = 5.0 A
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage (t =
0.3 sec., R.H. ≤ 30%, TA =
25°C) (Figure 15)
PD
VGS
EAS
Vesd
VISO
28 96 83 W
±30 V
130 mJ
3000
4500
V
V
Peak Diode Recovery
dv/dt
4.5 (Note 2)
V/ns
Continuous Source Current
(Body Diode)
IS
5A
Maximum Temperature for
Soldering Leads, 0.063″
(1.6 mm) from Case for 10 s
Package Body for 10 s
TL
TPKG
300 °C
260
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. IS = 4.4 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
http://onsemi.com
VDSS
500 V
RDS(on) (TYP) @ 2.2 A
1.25 W
N−Channel
D (2)
G (1)
S (3)
4
4
1 23
1 23
1 23
12
3
TO−220FP TO−220AB IPAK
DPAK
CASE 221D CASE 221A CASE 369D CASE 369AA
STYLE 1 STYLE 5 STYLE 2 STYLE 2
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
December, 2009 − Rev. 0
1
Publication Order Number:
NDF05N50Z/D
1 page  
NDF05N50Z, NDP05N50Z, NDD05N50Z
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
10
50% (DUTY CYCLE)
1 20%
10%
5.0%
2.0%
1.0%
0.1
SINGLE PULSE
0.01
1E−06
10
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 12. Thermal Impedance (Junction−to−Case) for NDF05N50Z
RqJC = 4.4°C/W
Steady State
1E+02
1E+03
1 50% (DUTY CYCLE)
20%
10%
0.1 5.0%
2.0%
1.0%
SINGLE PULSE
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 13. Thermal Impedance (Junction−to−Case) for NDD05N50Z
RqJC = 1.5°C/W
Steady State
1E+02
1E+03
100
10 50% (DUTY CYCLE)
20%
10%
1 5.0%
2.0%
1.0%
0.1
0.01
1E−06
SINGLE PULSE
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 14. Thermal Impedance (Junction−to−Ambient) for NDD05N50Z
RqJA = 38°C/W
Steady State
1E+02
1E+03
http://onsemi.com
5
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| PDF Descargar | [ Datasheet NDP05N50Z.PDF ] | |
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