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SDI200N12 PDF даташит

Спецификация SDI200N12 изготовлена ​​​​«Sirectifier Semiconductors» и имеет функцию, называемую «NPT IGBT Modules».

Детали детали

Номер произв SDI200N12
Описание NPT IGBT Modules
Производители Sirectifier Semiconductors
логотип Sirectifier Semiconductors логотип 

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SDI200N12 Даташит, Описание, Даташиты
SDI200N12
NPT IGBT Modules
www.DataSheet4U.com
Dimensions in mm (1mm = 0.0394")
Absolute Maximum Ratings
Symbol
Conditions
IGBT
VCES
IC
ICRM
VGES
TVj,(Tstg)
TC= 25(80)oC
TC= 25(80)oC, tP =1ms
TOPERATION <_ Tstg
Visol AC, 1min
Inverse Diode
IF = -IC TC= 25(80)oC
IFRM TC= 25(80)oC, tP =1ms
IFSM tP =10ms; sin.;Tj=150oC
Freewheeling diode
IF = -IC
IFRM
TC= 25(80)oC
TC= 25(80)oC, tP =1ms
IFSM tP =10ms; sin.;Tj=150oC
TC = 25oC, unless otherwise specified
Values
Units
1200
200(180)
400(360)
+_20
_ 40...+150(125)
2500
200(130)
400(360)
1450
V
A
A
V
oC
V
A
A
A
260(180)
400(360)
1800
A
A
A









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SDI200N12 Даташит, Описание, Даташиты
SDI200N12
www.DataSheet4U.com
NPT IGBT Modules
Characteristics
Symbol
Conditions
IGBT
VGE(th)
ICES
VCE(TO)
rCE
VGE = VCE, IC =6mA
VGE = 0; VCE = VCES; Tj = 25(125)oC
Tj = 25(125)oC
VGE = 15V, Tj = 25(125)oC
VCE(sat) IC =150A; VGE = 15V; chip level
Cies under following conditions
Coes VGE = 0, VCE = 25V, f = 1MHz
Cres
LCE
RCC'+EE' res., terminal-chip TC = 25(125)oC
under following conditions:
td(on)
tr
VCC = 600V, IC = 150A
RGon = RGoff =5.6 , Tj = 125oC
td(off)
VGE = ± 15V
tf
Eon(Eoff)
Inverse Diode
under following conditions:
VF = VEC IF = 150A; VGE = 0V; Tj = 25(125)oC
V(TO) Tj = 125oC
rT Tj = 125oC
IRRM IF = 100A; Tj = 25(125)oC
Qrr di/dt = A/us
Err VGE = V
FWD under following conditions:
VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC
V(TO)
Tj = 125oC
rT Tj = 125oC
IRRM
IF = 150A; Tj = 25oC
Qrr di/dt = A/us
Err VGE = V
Thermal Characteristics
Rth(j-c) per IGBT
Rth(j-c)D per Inverse Diode
Rth(j-c)FD per FWD
Rth(c-s) per module
Mechanical Data
Ms to heatsink M6
Mt to terminals M6
w
TC = 25oC, unless otherwise specified
min. typ. max. Units
4.5 5.5 6.5
0.1 0.3
1.4(1.6) 1.6(1.8)
7.33(10) 9.3(12.6)
2.5(3.1) 3(3.7)
10 13
1.5 2
0.8 1.2
20
0.35(0.5)
V
mA
V
m
V
nF
nH
m
220
100
600
70
24(17)
400
200
800
100
ns
ns
ns
ns
mJ
2(1.8)
5
55(80)
8(20)
2.5
1.2
7
V
V
m
A
uC
mJ
1.85(1.6)
3
60(90)
8(23)
2.2
1.2
5.5
V
V
m
A
uC
mJ
0.09
0.25
0.18
0.038
K/W
K/W
K/W
K/W
3 5 Nm
2.5 5 Nm
325 g










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Номер в каталогеОписаниеПроизводители
SDI200N12NPT IGBT ModulesSirectifier Semiconductors
Sirectifier Semiconductors

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

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