SBE808 PDF даташит
Спецификация SBE808 изготовлена «Sanyo Semicon Device» и имеет функцию, называемую «Schottky Barrier Diode 15V 1A Rectifier». |
|
Детали детали
Номер произв | SBE808 |
Описание | Schottky Barrier Diode 15V 1A Rectifier |
Производители | Sanyo Semicon Device |
логотип |
3 Pages
No Preview Available ! |
Ordering number : ENA0451
SBE808
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
SBE808
Schottky Barrier Diode
15V, 1A Rectifier
Applications
• High frequency rectification (switching regulators, converters, choppers).
Features
• Small switching noise.
• Low leakage current and high reliability due to planar structure.
• Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz sine wave, 1 cycle
Ratings
15
17
1
10
--55 to +150
--55 to +150
Unit
V
V
A
A
°C
°C
Electrical Characteristics at Ta=25°C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Marking : SE
Symbol
VR
VF1
VF2
IR
C
trr
Rth(j-a)
Conditions
IR=0.1mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm2!0.8mm)
min
15
Ratings
typ
0.43
0.49
20
185
max
0.48
0.54
3.0
10
Unit
V
V
V
µA
pF
ns
°C / W
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0106SB SY IM TC-00000264 No. A0451-1/3
No Preview Available ! |
Package Dimensions
unit : mm (typ)
7021A-001
2.0
54
0.15
0 to 0.02
1 23
0.65 0.3
SBE808
Electrical Connectiownww.DataSheet4U.com
54
123
1 : Anode
2 : No Contact
3 : Anode
4 : Cathode
5 : Cathode
Top view
123
54
1 : Anode
2 : No Contact
3 : Anode
4 : Cathode
5 : Cathode
SANYO : MCPH5
trr Test Circuit
Duty≤10%
50Ω
100Ω
10Ω
10µs
--5V
trr
IF -- VF
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Forward Voltage, VF -- V
IT11243
PF(AV) -- IO
0.7
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
0.6 (3)Rectangular wave θ=180°
(1) (2) (4) (3)
(4)Sine wave θ=180°
0.5
0.4
Rectangular wave
0.3
0.2 θ
Sine wave
360°
0.1
180°
0 360°
0 0.2 0.4 0.6 0.8 1.0 1.2
Average Output Current, IO -- A IT11245
10000
1000
100
10
IR -- VR
Ta=150°C
125°C
100°C
75°C
50°C
1.0 25°C
0.1 0°C
0.01
0.001
--25°C
0.0001
0 2 4 6 8 10 12
Reverse Voltage, VR -- V
PR(AV) -- VRM
1.2E--05
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
1.0E--05 (3)Rectangular wave θ=180°
(4)Sine wave θ=180°
8.0E--06 Rectangular
wave
6.0E--06
θ
360°
VR
4.0E--06 Sine wave
2.0E--06
180°
360°
VR
14 16
IT11244
(1)
(2)
(3)
(4)
0.0E+00
0
2 4 6 8 10 12 14 16
Peak Reverse Voltage, VRM -- V IT11246
No. A0451-2/3
No Preview Available ! |
SBE808
C -- VR
100
12 IFSM -w- wtw.DataSheet4U.com
f=1MHz
Current waveform 50Hz sine wave
7 10 IS
20ms
5 8t
6
3
4
2
2
10
0.1
2 3 5 7 1.0
2 3 5 7 10
2
Reverse Voltage, VR -- V
IT07885
0
7 0.01
23
5 7 0.1
23
Time, t -- s
5 7 1.0
23
IT00626
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0451-3/3
Скачать PDF:
[ SBE808.PDF Даташит ]
Номер в каталоге | Описание | Производители |
SBE802 | 100V/ 400mA Rectifier | Sanyo Semicon Device |
SBE803 | 90V/ 200mA Rectifier | Sanyo Semicon Device |
SBE805 | 500mA Rectifier | Sanyo Semicon Device |
SBE807 | Schottky Barrier Diode 30V 1.0A Rectifier | Sanyo Semicon Device |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |