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PDF NTZD3156C Data sheet ( Hoja de datos )
| Número de pieza | NTZD3156C | |
| Descripción | Small Signal MOSFET | |
| Fabricantes | ON Semiconductor | |
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NTZD3156C
www.DataSheet4U.com
Small Signal MOSFET
20 V, 540 mA / −20 V, −430 mA
Complementary N− and P−Channel
MOSFETs with Integrated Pull Up/Down
Resistor and ESD Protection
Features
• Leading Trench Technology for Low RDS(on) Performance
• High Efficiency System Performance
• Low Threshold Voltage
• Integrated G−S Resistor on Both Devices
• ESD Protected Gate
• Small Footprint 1.6 x 1.6 mm
• These are Pb−Free Devices
Applications
• Load/Power Switching with Level Shift
• Portable Electronic Products such as GPS, Cell Phones, DSC, PMP,
Bluetooth Accessories
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
N−Channel Continu-
ous Drain Current
(Note 1)
Steady
State
tv5s
P−Channel Continu-
ous Drain Current
(Note 1)
Steady
State
tv5s
Power Dissipation
(Note 1)
Steady
State
tv5s
Pulsed Drain Current N−Channel
P−Channel
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
tp = 10 ms
VDSS
VGS
ID
PD
IDM
20
±6
540
390
570
−430
−310
−455
250
280
1500
−750
V
V
mA
mW
mA
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TTSJT,G
IS
TL
−55 to
150
350
260
°C
mA
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq [1 oz] including traces).
http://onsemi.com
V(BR)DSS
N−Channel
20 V
P−Channel
−20 V
RDS(on) Max
0.55 W @ 4.5 V
0.7 W @ 2.5 V
0.9 W @ 1.8 V
0.9 W @ −4.5 V
1.2 W @ −2.5 V
2.0 W @ −1.8 V
ID Max
(Note 1)
540 mA
−430 mA
PINOUT: SOT−563
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
6
1
SOT−563−6
CASE 463A
STYLE 9
MARKING
DIAGRAM
ZC M G
G
ZC = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTZD3156CT1G SOT−563 4000 / Tape & Reel
NTZD3156CT2G SOT−563 4000 / Tape & Reel
NTZD3156CT5G SOT−563 8000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 0
1
Publication Order Number:
NTZD3156C/D
1 page  
NTZD3156C
N−CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise wnowtewd.)DataSheet4U.com
150
125
100
CISS
75
VGS = 0 V
TJ = 25°C
50
25 COSS
0 CRSS
0
5
10 15
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
20
4.5
4 QT
3.5
3
2.5
2
QGS
1.5
1
0.5
0
0
0.2
QGD
0.4 0.6
0.8
ID = 0.54 A
TJ = 25°C
1 1.2 1.4
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
100
VDD = 10 V
ID = 0.54 A
VGS = 4.5 V
10
td(off)
tf
td(on)
tr
0.5
VGS = 0 V
0.4 TJ = 25°C
0.3
0.2
0.1
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
http://onsemi.com
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