PDF NMF3000 Data sheet ( Hoja de datos )

Número de pieza	NMF3000
Descripción	Dual-Stage Differential Lines Filter
Fabricantes	ON Semiconductor
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No Preview Available ! NMF3000, NMF3010 www.DataSheet4U.com Dual−Stage, Differential Lines Filter with ESD Protection The NMF3000 and the NMF3010 are a dual−stage, differential line ESD and filtering protection scheme for input signals into portable devices. The NMF3000 is the first stage and is located at or very near to the interface to the outside world. It provides the high−level ESD protection as well as the initial filtering of incoming audio signals. The NMF3010 is the second stage and provides additional signal filtering. This second stage can be placed some distance away from the first stage to allow for effective filtering across extended distances. Features • Dual Filtering Lines for 2−Channels or Differential Transmission • Separate Power and Analog Grounds for ESD Protection and Filtering Circuitry • VCC Input Pin on First Stage to Set Microphone DC Bias • IEC 61000−4−2 Grade ±15 kV Contact ESD Protection on the Inputs, VCC, and Between Power and Analog Grounds • IEC 61000−4−2 Level 1 ESD protection on All Other Pin−to−Pin Combinations • These are Pb−Free Devices* http://onsemi.com A1 9 Bump Flip−Chip CASE 499AE A1 6 Bump Flip−Chip CASE 499AF MARKING DIAGRAMS ÇA1 ÇNMF 3000 ALYW ÈÈA1 ÈÈNIO ALYW A = Assembly Location L = Wafer Lot Y = Year W = Work Week Incoming Audio Signals VCC NMF3000FCT1G Microphone 1st Stage ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. NMF3010FCT1G C 2nd Stage C Audio Amplifier Figure 1. System Diagram *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2004 March, 2004 − Rev. 1 1 Publication Order Number: NMF3000/D 1 page NMF3000, NMF3010 MAXIMUM RATINGS www.DataSheet4U.com Rating Symbol Value Units Operating Ambient Temperature Range Moisture Sensitivity TA MSL −40 to 85 Level 1 °C Storage Temperature Range Tstg −55 to 150 °C Supply Voltage VCC 0 to 11 V Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (VCC = 0 V to 10 V, TA = −40°C to 85°C, All Typical Values Measured at 25°C) Parameter Conditions Symbol Min Typ Max Units Supply Voltage Attenuation First stage only @ 800 MHz, 50 W Environment VCC 0 10 V 52 95 dB Attenuation @ 1.9 GHz, 50 W Environment 52 70 dB B2B Diode Breakdown Voltage IR = 1.0 mA, Pin to PGND, AGND to PGND B2B BV ± 12 V Standoff Voltage VRM 10 V Leakage Current V = VRM, for each stage IRM 500 nA Power Dissipation 100 mW NMF3000FCT1G DC Series Resistance Input to output on first stage RI/O 997 1050 1103 W NMF3010FCT1G DC Series Resistance Input to output on second stage RI/O 950 1000 1050 W Input Capacitance per Line f = 1.0 MHz, for each stage when capacitor has 2.0 V across its terminals. CLINE 900 1000 1100 pF Bias Resistance per Line Crosstalk First Stage Only 50 W Source and Load RBIAS1 CT 950 −25 1000 1050 W dB Noise Idle−channel or Self−noise of the Network 6.0 nV/√Hz Distortion Anywhere in the Bandwidth 20 Hz to 20 kHz 0.01 1. Specifications apply to devices as a pair, as shown in the system diagram, unless otherwise noted as ‘for each stage’. % ESD CHARACTERISTICS Pin Level Type Min Units NMF3000FCT1G: A2, C2, A3, C3 to PGND NMF3010FCT1G: B2, B3, A3 to PGND 4+ IEC 61000−4−2 Contact 15 kV NMF3000FCT1G: A2, C2, A3, C3 to PGND 4 Air 15 kV NMF3010FCT1G: B2, B3, A3 to PGND IEC 61000−4−2 NMF3000FCT1G: All Pins Pairwise NMF3010FCT1G: All Pins Pairwise 1 IEC 61000−4−2 Contact 2.0 kV NMF3000FCT1G: All Pins Pairwise NMF3010FCT1G: All Pins Pairwise 1 Air 2.0 kV IEC 61000−4−2 COMPONENT MATCHING Component Description Resistors Capacitors Amount of Relative Variation between Symmetrical Resistors / Capaci- tors on the same Device Max 2.0 2.0 Unit % % http://onsemi.com 5 5 Page

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