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NAND01G-N PDF даташит

Спецификация NAND01G-N изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM 1.8V Multi-Chip Package».

Детали детали

Номер произв NAND01G-N
Описание 1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM 1.8V Multi-Chip Package
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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NAND01G-N Даташит, Описание, Даташиты
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NAND01G-N
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and
512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
PRELIMINARY DATA
Features summary
Multi-chip Package
– NAND Flash Memory
– 512 Mbit or 1 Gbit (x8/x16) Large Page
Size NAND Flash Memory
– 512 Mbit (x16) SDR or DDR LPSDRAM
Temperature range
– -30 up to 85 °C
Supply voltage
– NAND Flash : VDDF = 1.7V to 1.95V
– LPSDRAM: VDDD = VDDQD = 1.7V to 1.9V
Electronic Signature
ECOPACKpackages
Flash Memory
Nand Interface
– x8 or x16 bus width
– Multiplexed address/data
Page size
– x8 device: (2048 + 64 spare) Bytes
– x16 device: (1024 + 32 spare) Words
Block size
– x8 device: (128K + 4K spare) Bytes
– x16 device: (64K + 2K spare) Words
Page Read/Program
– Random access: 25µs (max)
– Sequential access: 50ns (min)
– Page program time: 300µs (typ)
Copy Back Program mode
– Fast page copy without external buffering
Fast Block Erase
– Block Erase time: 2ms (typ)
Chip Enable ‘don’t care’
– for simple interfacing with microcontrollers
Status Register
FBGA
TFBGA107 10.5 x 13 x 1.2mm
TFBGA149 10 x 13.5 x 1.2mm
SDR/DDR LPSDRAM
Interface: x16 bus width
Programmable Partial Array Self Refresh
Auto Temperature Compensated Self Refresh
Deep Power Down mode
1.8V LVCMOS interface
Quad internal Banks controlled by BA0 and
BA1
Wrap sequence: Sequential/Interleaved
Automatic and Controlled Precharge
Auto Refresh and Self Refresh
8,192 Refresh Cycles/64ms
Burst Termination by Burst Stop command and
Precharge Command
January 2006
Rev1.0
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/23
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NAND01G-N Даташит, Описание, Даташиты
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Table 1. Product List
Reference Part Number
NAND Product
LPSDRAM Product(1)
NAND01GR3N6 1Gbit 1.8V (x8) SDR 512Mbit (x16) 1.8V, 133MHz
NAND01G-N
NAND01GR4N5 1Gbit 1.8V (x16) DDR 512Mbit (x16) 1.8V, 133 MHz
1. SDR = Single Data Rate; DDR = Double Data Rate.
Package
TFBGA107
TFBGA149
2/23 Rev1.0









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NAND01G-N Даташит, Описание, Даташиты
NAND01G-N
Contents
www.DataCShoenette4nU.tcsom
1 Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
NAND Flash component . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
LPSDRAM component . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2 Signals description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.1 Flash memory Inputs/Outputs (I/O0-I/O7) . . . . . . . . . . . . . . . . . . . . . . . . 12
2.2 Flash memory Inputs/Outputs (I/O8-I/O15) . . . . . . . . . . . . . . . . . . . . . . . 12
2.3 Flash memory Address Latch Enable (AL) . . . . . . . . . . . . . . . . . . . . . . . 12
2.4 Flash memory Command Latch Enable (CL) . . . . . . . . . . . . . . . . . . . . . . 12
2.5 Flash memory Chip Enable (EF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.6 Flash memory Read Enable (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.7 Flash memory Write Enable (WF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.8 Flash memory Write Protect (WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.9 Flash memory Ready/Busy (RB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.10
2.11
2.12
Flash memory VDDF supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Flash memory VSSF ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
LPSDRAM Address Inputs (A0-A12) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.13 LPSDRAM Bank Select Address Inputs (BA0-BA1) . . . . . . . . . . . . . . . . . 14
2.14 LPSDRAM Data Inputs/Outputs (DQ0-DQ15) . . . . . . . . . . . . . . . . . . . . . 14
2.15 LPSDRAM Chip Select (ED) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.16 LPSDRAM Column Address Strobe (CAS) . . . . . . . . . . . . . . . . . . . . . . . 14
2.17 LPSDRAM Row Address Strobe (RAS) . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.18 LPSDRAM Write Enable (WD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.19 LPSDRAM Clock Input (K) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.20 LPSDRAM Clock Input (K) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.21 LPSDRAM Clock Enable (KE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.22 LPSDRAM Lower/Upper Data Input/Output Mask (DQM0, DQM1) . . . . . 15
2.23 Lower/Upper Data Read/Write Strobe Input/Output (LDQS, UDQS) . . . . 15
2.24
2.25
2.26
LPSDRAM VDDD supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
LPSDRAM VDDQD supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
LPSDRAM VSSD ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Rev1.0
3/23










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