(PDF) NESG210719 Datasheet - NECs NPN SiGe TRANSISTOR

Número de pieza	NESG210719
Descripción	NECs NPN SiGe TRANSISTOR
Fabricantes	NEC
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No Preview Available ! PRELIMINARY DATA SHEET www.DataSheet4U.com NEC's NPN SiGe TRANSISTOR NESG210719 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SiGe TRANSISTOR • 3-PIN SUPER MINIMOLD (19) PACKAGE ORDERING INFORMATION PART NUMBER NESG210719 NESG210719-T1 QUANTITY 50 pcs (Non reel) 3 kpcs/reel SUPPLYING FORM • 8 mm wide embossed taping • Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales ofﬁce. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA =+25ºC) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot Note Tj Tstg RATINGS 13.0 5.0 1.5 100 200 150 −65 to +150 Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB UNIT V V V mA mW °C °C Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. California Eastern Laboratories 1 page

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PDF NESG210719 Data sheet ( Hoja de datos )