(PDF) NESG2107M33 Datasheet - NECs NPN SILICON TRANSISTOR

Número de pieza	NESG2107M33
Descripción	NECs NPN SILICON TRANSISTOR
Fabricantes	California Eastern Labs
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No Preview Available ! PRELIMINARY DATA SHEET www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS • 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE ORDERING INFORMATION PART NUMBER NESG2107M33-A NESG2107M33-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM • 8 mm wide embossed taping • Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales ofﬁce. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA =+25ºC) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot Note Tj Tstg RATINGS 13.0 5.0 1.5 100 130 150 −65 to +150 Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB UNIT V V V mA mW °C °C Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. California Eastern Laboratories 1 page

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PDF NESG2107M33 Data sheet ( Hoja de datos )