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PDF NESG250134 Data sheet ( Hoja de datos )
| Número de pieza | NESG250134 | |
| Descripción | NECs NPN SiGe RF TRANSISTOR | |
| Fabricantes | California Eastern Labs | |
| Logotipo |  |
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NEC's NPN SiGe RF TRANSISTOR www.DataSheet4U.com
FOR MEDIUM OUTPUT POWER
AMPLIFICATION (800 mW)
NESG250134
3-PIN POWER MINIMOLD (34 PACKAGE)
FEATURES
• THIS PRODUCT IS SUITABLE FOR
MEDIUM OUTPUT POWER (800 mW) AMPLIFICATION
PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz
PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz
• MAXIMUM STABLE GAIN:
MSG = 23 dB TYP @ VCE = 3.6 V, IC = 100 mA, f = 460 MHz
• SiGe TECHNOLOGY:
UHS2-HV process
• ABSOLUTE MAXIMUM RATINGS:
VCBO = 20 V
• 3-PIN POWER MINIMOLD (34 PACKAGE)
ORDERING INFORMATION
PART NUMBER
NESG250134-AZ
NESG250134-T1-AZ
ORDER NUMBER
NESG250134-AZ
NESG250134-T1-AZ
PACKAGE
3-pin power minimold
(Pb-Free) Note1
QUANTITY
25 pcs (Non reel)
1 kpcs/reel
SUPPLYING FORM
• 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Note 1. Contains lead in the part except the electrode terminals.
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
RATINGS
20
9.2
2.8
500
1.5
150
−65 to +150
Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB
UNIT
V
V
V
mA
W
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories
1 page  
1,000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
100
1,000
NESG250134
www.DataSheet4U.com
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 4 V
100
10
10
100
Collector Current IC (mA)
1,000
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
VCE = 3 V
f = 460 MHz
16
12
8
4
0
10 100 1,000
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
VCE = 4 V
f = 460 MHz
16
12
8
4
0
10 100 1,000
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
10
10
100
Collector Current IC (mA)
1,000
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
VCE = 3.6 V
f = 460 MHz
16
12
8
4
0
10 100 1,000
Collector Current IC (mA)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40 VCE = 3 V
35 IC = 100 mA
30 MSG MAG
25
20
15
10
5 |S21e|2
0
0.1 1
Frequency f (GHz)
10
5 Page 
COMPONENT LIST
C1
C2
C3, C4
C5
C6
C7
C8
C9
C10, C12
C11
L1
L2
R1
VALUE
47 pF
12 pF
7 pF
3 pF
6 pF
0.5 pF
5 pF
51 pF
100 nF
1 μF
100 nH
15 nH
30 Ω
MAKER
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Toko
Toko
SSM
NESG250134
www.DataSheet4U.com
DISTORTION EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
3RD ORDER
INTERMODULATION DISTORTION
vs. 1 TONE OUTPUT POWER
80
VCE = 3.6 V, f = 460 MHz,
70 IC (set) = 30 mA, offset = 1 MHz
60
50
40
30
20
10
0
-5 0
5 10 15 20 25
1 tone Output Power Pout (dBm)
Remark The graphs indicate nominal characteristics.
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet NESG250134.PDF ] | |
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