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PDF NSS60600MZ4T1G Data sheet ( Hoja de datos )
| Número de pieza | NSS60600MZ4T1G | |
| Descripción | PNP Transistor | |
| Fabricantes | ON Semiconductor | |
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NSS60600MZ4T1G
60 V, 6.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor's e2PowerEdge family of low VCE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (VCE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
•ăThis is a Pb-Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector‐Emitter Voltage
Collector‐Base Voltage
Emitter‐Base Voltage
Collector Current - Continuous
Collector Current - Peak
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
ICM
-60
-100
-6.0
-6.0
-12.0
Vdc
Vdc
Vdc
A
A
Characteristic
Symbol
Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
800 mW
6.5 mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA (Note 1)
155
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
2W
15.6 mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA (Note 2)
64
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
(Note 3)
710 mW
Junction and Storage
Temperature Range
TJ, Tstg
-55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-ā4 @ 7.6 mm2, 1 oz. copper traces.
2. FR-ā4 @ 645 mm2, 1 oz. copper traces.
3. Thermal response.
©Ă Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 1
1
www.DataSheet4U.com
http://onsemi.com
-60 VOLTS, 6.0 AMPS
2.0 WATTS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 50 mW
C 2,4
B1 E3
MARKING
DIAGRAM
SOT-223
AYW
CASE 318E
60600G
STYLE 1
1
A
Y
W
60600
G
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb-Free Package
PIN ASSIGNMENT
4
C
BCE
1 23
Top View Pinout
ORDERING INFORMATION
Device
Package
Shipping†
NSS60600MZ4T1G SOT-223
(Pb-Free)
1000/
Tape & Reel
NSS60600MZ4T3G SOT-223
(Pb-Free)
4000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS60600MZ4/D
1 page  
NSS60600MZ4T1G
PACKAGE DIMENSIONS
www.DataSheet4U.com
D
b1
4
HE
1 23
E
e1
e
0.08 (0003)
A1
b
A
SOT-223 (TO-261)
CASE 318E-04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
DIM MIN
NOM MAX
MIN NOM MAX
A 1.50
1.63
1.75
0.060 0.064 0.068
A1 0.02
0.06
0.10
0.001 0.002 0.004
b 0.60 0.75 0.89 0.024 0.030 0.035
b1 2.90
3.06
3.20
0.115 0.121 0.126
c 0.24 0.29 0.35 0.009 0.012 0.014
D 6.30
6.50
6.70
0.249 0.256 0.263
E 3.30
3.50
3.70
0.130 0.138 0.145
e 2.20 2.30 2.40 0.087 0.091 0.094
e1 0.85
0.94
1.05
0.033 0.037 0.041
L1 1.50
1.75
2.00
0.060 0.069 0.078
H E 6.70 7.00 7.30 0.264 0.276 0.287
q 0° - 10° 0° - 10°
C
q STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
L1 4. COLLECTOR
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
ǒ ǓSCALE 6:1
mm
inches
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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For additional information, please contact your local
Sales Representative
http://onsemi.com
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