PDF APTGF100DA120TG Data sheet ( Hoja de datos )

Número de pieza	APTGF100DA120TG
Descripción	Boost chopper NPT IGBT Power Module
Fabricantes	Microsemi Corporation
Logotipo
Hay una vista previa y un enlace de descarga de APTGF100DA120TG (archivo pdf) en la parte inferior de esta página. Total 6 Páginas
No Preview Available ! APTGF100DA120TGwww.DataSheet4U.com Boost chopper NPT IGBT Power Module VCES = 1200V IC = 100A @ Tc = 80°C VBUS SENSE VBUS N T C2 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR1 Q2 G2 E2 0/VBU S OUT N T C1 Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration VBUS VBUS SENSE G2 E2 0/ VB US E2 G2 OUT OUT NT C2 NT C1 Absolute maximum ratings Symbol Parameter VCES Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD RBSOA Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 135 100 300 ±20 568 200A @ 1200V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 1 page Turn-On Delay Time vs Collector Current 45 VCE = 600V 40 RG = 2.5Ω VGE = 15V 35 30 25 0 50 100 150 200 ICE, Collector to Emitter Current (A) 250 Current Rise Time vs Collector Current 180 VCE = 600V 140 RG = 2.5Ω 100 60 VGE=15V 20 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current 56 48 VCE = 600V RG = 2.5Ω TJ=125°C, VGE=15V 40 32 24 TJ=25°C, 16 VGE=15V 8 0 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance 36 32 VCE = 600V VGE = 15V Eon, 100A 28 TJ= 125°C 24 20 Eoff, 100A 16 12 Eon, 50A 8 4 Eoff, 50A 0 0 5 10 15 20 25 Gate Resistance (Ohms) APTGF100DA120TGwww.DataSheet4U.com Turn-Off Delay Time vs Collector Current 400 350 VGE=15V, TJ=125°C 300 250 200 VCE = 600V RG = 2.5Ω VGE=15V, TJ=25°C 0 50 100 150 200 ICE, Collector to Emitter Current (A) 250 Current Fall Time vs Collector Current 50 TJ = 125°C 40 30 20 0 TJ = 25°C VCE = 600V, VGE = 15V, RG = 2.5Ω 50 100 150 200 250 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current 16 VCE = 600V VGE = 15V 12 RG = 2.5Ω TJ = 125°C 8 TJ = 25°C 4 0 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Junction Temp. 16 VCE = 600V Eon, 100A VGE = 15V 12 RG = 2.5Ω 8 Eoff, 100A 4 Eon, 50A Eoff, 50A 0 0 25 50 75 100 125 TJ, Junction Temperature (°C) www.microsemi.com 5-6 5 Page

Páginas	Total 6 Páginas
PDF Descargar	[ Datasheet APTGF100DA120TG.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
APTGF100DA120T	Boost chopper NPT IGBT Power Module	Advanced Power Technology
APTGF100DA120TG	Boost chopper NPT IGBT Power Module	Microsemi Corporation

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar