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NTUD3128N PDF даташит

Спецификация NTUD3128N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Small Signal MOSFET».

Детали детали

Номер произв NTUD3128N
Описание Small Signal MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTUD3128N Даташит, Описание, Даташиты
NTUD3128N
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Small Signal MOSFET
20 V, 200 mA, Dual N-Channel, 1.0 mm x
1.0 mm SOT-963 Package
Features
ăDual N-Channel MOSFET
ăOffers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mm
Package
ă1.5 V Gate Voltage Rating
ăUltra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics
ăThese are Pb-Free Devices
Applications
ăGeneral Purpose Interfacing Switch
ăOptimized for Power Management in Ultra Portable Equipment
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
tv5s
Steady
State
tv5s
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
TA = 25°C PD
20 V
±8 V
160
115 mA
200
125
mW
200
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
IS
TL
800
-55 to
150
200
260
mA
°C
mA
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
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V(BR)DSS
20 V
RDS(ON) MAX
3.0 W @ 4.5 V
4.0 W @ 2.5 V
6.0 W @ 1.8 V
10 W @ 1.5 V
ID Max
0.2 A
D1 D2
G1 G2
N-Channel
S1
MOSFET
S2
PINOUT: SOT-963
S1 1
6 D1
G1 2
5 G2
D2 3
Top View
4 S2
SOT-963
CASE 527AA
MARKING
DIAGRAM
N MĂG
1
N = Specific Device Code
M = Date Code
G = Pb-Free Package
©Ă Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 0
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
1 Publication Order Number:
NTUD3127C/D









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NTUD3128N Даташит, Описание, Даташиты
NTUD3128N
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t = 5 s (Note 3)
RqJA
3. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
Max
1000
600
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Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 4)
V(BR)DSS
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V, VDS = 5 V
TJ = 25°C
TJ = 85°C
VGS = 0 V, VDS = 16 V
TJ = 25°C
VDS = 0 V, VGS = ±5.0 V
Gate Threshold Voltage
Drain-to-Source On Resistance
VGS(TH)
RDS(ON)
Forward Transconductance
gFS
Source-Drain Diode Voltage
VSD
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 4.5 V, ID = 100 mA
VGS = 2.5 V, ID = 50 mA
VGS = 1.8 V, ID = 20 mA
VGS = 1.5 V, ID = 10 mA
VGS = 1.2 V, ID = 1.0 mA
VDS = 5.0 V, ID = 125 mA
VGS = 0 V, ID = 10 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
f = 1.0 MHz, VGS = 0 V
VDS = 15 V
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn-On Delay Time
td(ON)
Rise Time
Turn-Of f Delay Time
tr
td(OFF)
VGS = 4.5 V, VDD = 10 V, ID = 200 mA,
RG = 2.0 W
Fall Time
tf
4. Switching characteristics are independent of operating junction temperatures.
Min Typ Max Unit
20 V
50
200 nA
100
100 nA
0.4 1.0
1.5 3.0
2.0 4.0
3.0 6.0
4.0 10
5.5
0.35
0.6 1.0
V
W
S
V
9.0
3.0 pF
2.2
15
24
ns
90
60
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NTUD3128N Даташит, Описание, Даташиты
NTUD3128N
TYPICAL PERFORMANCE CURVES
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0.4
VGS = 3 V to 5 V
2.5 V
0.3
TJ = 25°C
2.0 V
0.4
VDS 5 V
TJ = -55°C
0.3
TJ = 125°C
TJ = 25°C
0.2 0.2
1.5 V
0.1
1.0 V
0
0 123 45
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
0.1
0
0 1 2 3 45
VGS, GATE-T O-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
15 2.5
ID = 200 mA
TJ = 25°C
TJ = 25°C
2.0
VGS = 2.5 V
10
1.5
VGS = 4.5 V
1.0
5
0.5
0
012 34
VGS, GATE-T O-SOURCE VOLTAGE (VOLTS)
Figure 3. On-Resistance vs. Gate Voltage
5
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
ID, DRAIN CURRENT (AMPS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
1.75
1.5
1.25
ID = 200 mA
VGS = 4.5 V
1.0
0.75
0.5
1000
VGS = 0 V
100
10
TJ = 150°C
TJ = 125°C
0.25
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On-Resistance Variation with
Temperature
1
0 4 8 12 16 20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
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Номер в каталогеОписаниеПроизводители
NTUD3128NSmall Signal MOSFETON Semiconductor
ON Semiconductor

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