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PDF SEMIX151GB12E4S Data sheet ( Hoja de datos )
| Número de pieza | SEMIX151GB12E4S | |
| Descripción | Trench IGBT Modules | |
| Fabricantes | Semikron International | |
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SEMiX151GB12E4s
SEMiX®1s
Trench IGBT Modules
SEMiX151GB12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 3xICnom
VCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tc = 25 °C
Tc = 80 °C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 150 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 6 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 150 A
Tj = 150 °C
Tj = 150 °C
RG on = 1 Ω
RG off = 1 Ω
Tj = 150 °C
Tj = 150 °C
di/dton = 3900 A/µs Tj = 150 °C
di/dtoff = 2000 A/µs Tj = 150 °C
per IGBT
www.DataSheet4U.com
Values
1200
232
179
150
450
-20 ... 20
10
-40 ... 175
189
141
150
450
900
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min. typ. max. Unit
1.8 2.05 V
2.2 2.4 V
0.8 0.9 V
0.7 0.8 V
6.7 7.7 mΩ
10.0 10.7 mΩ
5 5.8 6.5 V
0.1 0.3 mA
mA
9.3 nF
0.58 nF
0.51 nF
850 nC
5.00 Ω
204 ns
42 ns
16.6 mJ
468 ns
91 ns
18.4 mJ
0.19 K/W
GB
© by SEMIKRON
Rev. 1 – 20.02.2009
1
1 page  
SEMiX151GB12E4s
www.DataSheet4U.com
SEMiX 1s
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 1 – 20.02.2009
5
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