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Número de pieza | HMC409LP4E | |
Descripción | GaAs InGaP HBT 1 WATT POWER AMPLIFIER 3.3 - 3.8 GHz | |
Fabricantes | Hittite Microwave Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HMC409LP4E (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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5
Typical Applications
This amplifier is ideal for use as a power
amplifier for 3.3 - 3.8 GHz applications:
• WiMAX 802.16
• Fixed Wireless Access
• Wireless Local Loop
Functional Diagram
HMC409LP4 / 409LP4E
www.DataSheet4U.com
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
Features
Gain: 31 dB
40% PAE @ +32.5 dBm pout
2% EVM @ Pout = +22 dBm
with 54Mbps OFDM Signal
+46 dBm Output IP3
Integrated Power Control (Vpd)
Single +5V Supply
General Description
The HMC409LP4 & HMC409LP4E are high efficiency
GaAs InGaP HBT MMIC Power amplifiers operating
from 3.3 to 3.8 GHz. The amplifier is packaged in a
low cost, leadless SMT package. Utilizing a minimum
of external components the amplifier provides 31 dB
of gain and +32.5 dBm of saturated power from a
+5.0V supply voltage. The power control (Vpd) can be
used for full power down or RF output power/current
control. For +22 dBm OFDM output power (64 QAM,
54 Mbps), the HMC409LP4 & HMC409LP4E achieve
an error vector magnitude (EVM) of 2%, meeting
WiMAX 802.16 linearity requirements.
5 - 166
Electrical Specifications, TA = +25° C, Vs = +5V, Vpd = +5V, Vbias=+5V
Frequency Range
Parameter
Min. Typ. Max.
3.3 - 3.4
Min. Typ. Max.
3.4 - 3.6
Min. Typ. Max.
3.6 - 3.8
Units
GHz
Gain
30 32
29 31.5
28 30
dB
Gain Variation Over Temperature
0.04 0.05
0.04 0.05
0.035 0.045 dB/ °C
Input Return Loss
10 15 15 dB
Output Return Loss
13 14 10 dB
Output Power for 1dB Compression (P1dB)
28 30
28 30.5
28 30.5
dBm
Saturated Output Power (Psat)
Output Third Order Intercept (IP3) [2]
Error Vector Magnitude @ 3.5 GHz
(54 Mbps OFDM Signal @ +22 dBm Pout)
32
41 45
32.5
42 45.5
2
32
41 45
dBm
dBm
%
Noise Figure
5.8 5.8
6 dB
Supply Current (Icq)
Vs= Vcc1 + Vcc2= +5V
615
615
615 mA
Control Current (Ipd)
Vpd = +5V
4
4
4 mA
Switching Speed
tOn, tOff
20
20
20 ns
Bias Current (Ibias)
10 10 10 mA
Note 1: Specifications and data reflect HMC409LP4 measured using the application circuit found herein. Contact the HMC Applications Group for assis-
tance in optimizing performance for your application.
Note 2: Two-tone output power of +15 dBm per tone, 1 MHz spacing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page v01.0705
5
Absolute Maximum Ratings
Collector Bias Voltage (Vcc1, Vcc2)
Control Voltage (Vpd)
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 57.5 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
+5.5 Vdc
+10 dBm
150 °C
3.74 W
17.4 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC409LP4 / 409LP4E
www.DataSheet4U.com
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
Typical Supply, Current vs. Supply
Voltage, Vcc1 = Vcc2 = Vpd
Vs (Vdc)
Icq (mA)
4.75
516
5.0 615
5.25
721
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
5 - 170
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
Package Body Material
HMC409LP4
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC409LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
H409
XXXX
H409
XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet HMC409LP4E.PDF ] |
Número de pieza | Descripción | Fabricantes |
HMC409LP4 | GaAs InGaP HBT 1 WATT POWER AMPLIFIER 3.3 - 3.8 GHz | Hittite Microwave Corporation |
HMC409LP4E | GaAs InGaP HBT 1 WATT POWER AMPLIFIER 3.3 - 3.8 GHz | Hittite Microwave Corporation |
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