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HAT2205C PDF даташит

Спецификация HAT2205C изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel Power MOS FET Power Switching».

Детали детали

Номер произв HAT2205C
Описание Silicon N Channel Power MOS FET Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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HAT2205C Даташит, Описание, Даташиты
HAT2205C
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS (on) = 38 mtyp. (at VGS = 4.5 V)
Low drive current.
High density mounting
1.8 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband
6
5
4
3
2
1
www.DataSheet4U.com
REJ03G1237-0400
Rev.4.00
Jan 26, 2006
23 45
DD DD
6
G
S
1
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse)Note1
Body - Drain diode reverse drain current
Channel dissipation
IDR
PchNote 2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm)
Ratings
12
±8
3
12
3
850
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
Rev.4.00 Jan 26, 2006 page 1 of 6









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HAT2205C Даташит, Описание, Даташиты
HAT2205C
Electrical Characteristics
www.DataSheet4U.com
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to Source breakdown voltage V(BR)DSS 12
V ID = 10 mA, VGS = 0
Gate to Source breakdown voltage V(BR)GSS ±8
V IG = ±10 µA, VDS = 0
Gate to Source leakage current
IGSS
±10 µA VGS = ±6.4 V, VDS = 0
Drain to Source leakage current
IDSS
1
µA VDS = 12 V, VGS = 0
Gate to Source cutoff voltage
VGS(th)
0.3
1.2
V VDS = 10 V, ID = 1 mA
Drain to Source on state resistance RDS(on)
38
50 mVGS = 4.5 V, ID = 1.5 A Note3
— 48 67 mVGS = 2.5 V, ID = 1.5 A Note3
— 65 97 mVGS = 1.8 V, ID = 1.5 A Note3
Forward transfer admittance
|yfs| 6
9 — S VDS = 10 V, ID = 1.5 A Note3
Input capacitance
Ciss — 430 —
pF VGS = 0, f = 1 MHz,
Output capacitance
Coss
72
pF VDS = 10 V
Reverse transfer capacitance
Crss
35
pF
Total gate charge
Gate to Source charge
Qg — 6 — nC VGS = 4.5 V, VDS = 10 V,
Qgs — 0.9 — nC ID = 3 A
Gate to Drain charge
Qgd — 0.9 — nC
Turn - on delay time
td(on)
9
— ns VGS = 4.5 V, ID = 1.5 A,
Rise time
Turn - off delay time
tr — 3 — ns VDD = 10 V,
td(off)
30
ns RL = 6.7 , Rg = 4.7
Fall time
tf — 3 — ns
Body - Drain diode forward voltage
VDF
0.8 1.1
V IF = 3 A, VGS = 0 Note3
Notes: 3. Pulse test
Rev.4.00 Jan 26, 2006 page 2 of 6









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HAT2205C Даташит, Описание, Даташиты
HAT2205C
Main Characteristics
Power vs. Temperature Derating
1.6
Test Condition :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm), Ta = 25°C
1.2
0.8
0.4
0 50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10
5V
2.5 V
8
1.8V
1.6 V
6
4
1.4 V
2
VGS = 1.2 V
Pulse Test
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Pulse Test
3A
100
1.5 A
ID = 0.5 A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Rev.4.00 Jan 26, 2006 page 3 of 6
www.DataSheet4U.com
Maximum Safe Operation Area
100
Ta = 25°C,1shot pulse
10 µs 100 µs When using the FR4 board.
10
1
0.1
DC PoWper=at1io01nmmss
Operation in this area
is limited by RDS(on)
0.01
0.001
0.001 0.01 0.1 1 10 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 10 V
Pulse Test
16
12
–25°C
8 25°C
Tc = 75°C
4
0 1 2345
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
1.8 V
100 2.5 V
VGS = 4.5 V
10
0.1 1 10 100
Drain Current ID (A)










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Номер в каталогеОписаниеПроизводители
HAT2205CSilicon N Channel Power MOS FET Power SwitchingRenesas Technology
Renesas Technology

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