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HAT2267H PDF даташит

Спецификация HAT2267H изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel Power MOS FET Power Switching».

Детали детали

Номер произв HAT2267H
Описание Silicon N Channel Power MOS FET Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

8 Pages
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HAT2267H Даташит, Описание, Даташиты
HAT2267H
Silicon N Channel Power MOS FET
Power Switch
Features
High speed switching
Capable of 6 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 13 mtyp. (at VGS = 10 V)
Lead Free
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
1 234
4
G
5
D
SSS
123
www.DataSheet4U.com
REJ03G1463-0400
Rev.4.00
Jul 05, 2006
1, 2, 3 Source
4 Gate
5 Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
80
±20
25
100
25
15
30
25
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.4.00 Jul 05, 2006 page 1 of 7









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HAT2267H Даташит, Описание, Даташиты
HAT2267H
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
80
2.0
25
Typ
13
15
50
2150
330
130
0.5
30
9.0
6.5
7.5
9
35
5
0.83
40
Max
±0.1
1
4.0
16
21
1.08
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Unit
V
µA
µA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 80 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 12.5 A, VGS = 10 V Note4
ID = 12.5 A, VGS = 6 V Note4
ID = 12.5 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 25 V, VGS = 10 V,
ID = 25 A
VGS = 10 V, ID = 12.5 A,
VDD 30 V, RL = 2.4 Ω,
Rg = 4.7
IF = 25 A, VGS = 0 Note4
IF = 25 A, VGS = 0,
diF/ dt = 100 A/ µs
Rev.4.00 Jul 05, 2006 page 2 of 7









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HAT2267H Даташит, Описание, Даташиты
HAT2267H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50
4.7 V
4.5 V Pulse Test
4.3 V
40 5.3 V
10 V
30 4.1 V
20
3.9 V
10
VGS = 3.5 V
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
250
Pulse Test
200
150 ID = 10 A
100
5A
50
2A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.4.00 Jul 05, 2006 page 3 of 7
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Maximum Safe Operation Area
1000
10 µs
100
10
1
Operation in
this area is
DC OperaPtiWon=Tc110=mm2s51s°0C0 µs
0.1 limited by RDS(on)
Ta = 25°C
0.01 1 shot Pulse
0.01
0.1
1 10
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
25°C
–25°C
0
24
6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
30
VGS = 6 V
10
10 V
3
1
13
Pulse Test
10 30 100 300 1000
Drain Current ID (A)










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Номер в каталогеОписаниеПроизводители
HAT2267HSilicon N Channel Power MOS FET Power SwitchingRenesas Technology
Renesas Technology

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