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HAT2268C PDF даташит

Спецификация HAT2268C изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel Power MOS FET Power Switching».

Детали детали

Номер произв HAT2268C
Описание Silicon N Channel Power MOS FET Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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HAT2268C Даташит, Описание, Даташиты
HAT2268C
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 27 mtyp. (at VGS = 10 V)
Low drive current.
High density mounting
4.5 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband
6
5
4
3
2
1
www.DataSheet4U.com
REJ03G1354-0200
Rev.2.00
Feb 28, 2006
23 45
DD DD
6
G
S
1
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse)Note1
Body - Drain diode reverse drain current
Channel dissipation
IDR
PchNote 2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm)
Ratings
30
+20 / –10
4
16
4
900
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.2.00 Feb 28, 2006 page 1 of 6









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HAT2268C Даташит, Описание, Даташиты
HAT2268C
Electrical Characteristics
Item
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leak current
Drain to Source leak current
Gate to Source cutoff voltage
Drain to Source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body - Drain diode forward voltage
Notes: 3. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
Min
30
+20
–10
1.0
5.5
Typ
27
37
8.5
440
110
45
15
50
45
7
8
1.5
1.3
0.85
Max
±10
1
2.0
34
54
1.15
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Unit
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±10 µA, VDS = 0
µA VGS = +16 / -8 V, VDS = 0
µA VDS = 30 V, VGS = 0
V VDS = 10 V, ID = 1 mA
mID = 2 A, VGS = 10 VNote3
mID = 2 A, VGS = 4.5 VNote3
S ID = 2 A, VDS = 10 V Note3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 2 A, VGS = 10 V,
ns VDD = 10 V, RL = 5 ,
ns Rg = 4.7
ns
nC VDD = 10 V, VGS = 10 V
nC ID = 4 A
nC
V IF = 4 A, VGS = 0 Note3
Rev.2.00 Feb 28, 2006 page 2 of 6









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HAT2268C Даташит, Описание, Даташиты
HAT2268C
Main Characteristics
Power vs. Temperature Derating
1.6
Test Condition :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm), Ta = 25°C
1.2
0.8
0.4
0 50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
20
10 V
5.0 V
16 4.3 V
12
4.0 V
3.7 V
3.5 V
3.3 V
8
3.0 V
4 VGS = 2.7 V
Pulse Test
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
400
Pulse Test
300
200
100
ID = 1 A
4A
2A
0
24
6 8 10
Gate to Source Voltage VGS (V)
Rev.2.00 Feb 28, 2006 page 3 of 6
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Maximum Safe Operation Area
100
Ta = 25°C, 1shot pulse
When using the FR4 board.
10 µs
10
PW
1
DC
= 10
operation
ms
0.1
0.01 Operation in this area
is limited by RDS(on)
0.001
0.01
0.1
1
10 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 10 V
Pulse Test
16
12
8
4 Tc = 75°C
25°C
0 12
–25°C
34
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
4.5 V
VGS = 10 V
10
Pulse Test
1
0.1 1 10 100
Drain Current ID (A)










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Номер в каталогеОписаниеПроизводители
HAT2268CSilicon N Channel Power MOS FET Power SwitchingRenesas Technology
Renesas Technology

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