HAT2287WP PDF даташит
Спецификация HAT2287WP изготовлена «Renesas Technology» и имеет функцию, называемую «Silicon N Channel Power MOS FET Power Switching». |
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Детали детали
Номер произв | HAT2287WP |
Описание | Silicon N Channel Power MOS FET Power Switching |
Производители | Renesas Technology |
логотип |
4 Pages
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HAT2287WP
Silicon N Channel Power MOS FET
Power Switching
Features
• Low on-resistance
• Low drive current
• High density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 678
4 32 1
4
G
5 678
D DDD
www.DataSheet4U.com
REJ03G1470-0100
Rev.1.00
Sep 06, 2006
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
17
34
17
34
17
19.2
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.1.00 Sep 06, 2006 page 1 of 3
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HAT2287WP
Electrical Characteristics
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Min
200
—
—
3.0
8
—
—
—
—
—
—
—
—
—
—
—
—
—
Notes: 4. Pulse test
Typ
—
—
—
—
14
0.084
Max
—
1
±0.1
4.0
—
0.094
1200
220
19
31
37
69
8
26
7
10
0.9
130
—
—
—
—
—
—
—
—
—
—
1.4
—
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Unit
V
µA
µA
V
S
Ω
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 200 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 8.5 A, VDS = 10 V Note4
ID = 8.5 A, VGS = 10 VNote4
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
ns ID = 8.5 A
ns VGS = 10 V
ns RL = 11.8 Ω
ns Rg = 10 Ω
nC VDD = 160 V
nC VGS = 10 V
nC ID = 17 A
V IF = 17 A, VGS = 0 Note4
ns IF = 17 A, VGS = 0
diF/dt = 100 A/µs
Rev.1.00 Sep 06, 2006 page 2 of 3
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HAT2287WP
Package Dimensions
Package Name
WPAK
JEITA Package Code
−
RENESAS Code
PWSN0008DA-A
Previous Code
WPAKV
MASS[Typ.]
0.075g
5.1 ± 0.2
0.8Max
0.04Min
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4.21Typ
1.27Typ
Unit: mm
3.9 ± 0.2
0.635Max
1.27Typ
4.9 ± 0.1
0.2Typ
0.4 ± 0.06
(Ni/Pd/Au plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Ordering Information
Part Name
Quantity
Shipping Container
HAT2287WP-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.1.00 Sep 06, 2006 page 3 of 3
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HAT2287WP | Silicon N Channel Power MOS FET Power Switching | Renesas Technology |
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