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PDF HMC517 Data sheet ( Hoja de datos )
| Número de pieza | HMC517 | |
| Descripción | GaAs PHEMT MMIC LOW NOISE AMPLIFIER 17 - 26 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
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v01.0606
HMC517
www.DataSheet4U.com
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 17 - 26 GHz
1
Typical Applications
Features
The HMC517 is ideal for use as a LNA or Driver ampli-
fier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
Noise Figure: 2.2 dB
Gain: 19 dB
OIP3: +24 dBm
Single Supply: +3V @ 65 mA
50 Ohm Matched Input/Output
Functional Diagram
General Description
The HMC517 chip is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplifier (LNA) which
covers the 17 to 26 GHz frequency range. The
HMC517 provides 19 dB of small signal gain, 2.2 dB
of noise figure and has an output IP3 greater than
+24 dBm. The chip can easily be integrated into hy-
brid or MCM assemblies due to its small size. All data
is tested with the chip in a 50 Ohm test fixture con-
nected via 0.075mm (3 mil) ribbon bonds of minimal
length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter
bondwires may also be used to make the RFIN and
RFOUT connections.
Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
Min.
Typ.
Max. Min.
Typ.
Max. Units
17 - 22
22 - 26
GHz
16 19
15 18
dB
0.015 0.025
0.015 0.025 dB/ °C
2.2 2.7
2.4 2.9 dB
17 15 dB
10 10 dB
8 11
9.5 12.5
dBm
15 15 dBm
23 24 dBm
65 65 mA
1 - 162
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
1
v01.0606
HMC517
www.DataSheet4U.com
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 17 - 26 GHz
Pad Descriptions
Pad Number
Function
1 RFIN
2, 3, 4
Vdd1, 2, 3
5
6, 7, 8
Die Bottom
RFOUT
G3, 2, 1
GND
Description
This pad is AC coupled and matched to 50 Ohms from
17 - 28 GHz.
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
This pad is AC coupled and matched to 50 Ohms from
17 - 28 GHz.
These pads must be connected to RF/DC ground for proper
operation.
Die Bottom must be connected to RF/DC ground.
Interface Schematic
Assembly Diagram
1 - 166
Note: G1, G2 and G3 must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC517.PDF ] | |
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