PDF HMC278MS8G Data sheet ( Hoja de datos )

Número de pieza	HMC278MS8G
Descripción	100 mW MEDIUM POWER GaAs MMIC AMPLIFIER 1.7 - 3.0 GHz
Fabricantes	Hittite Microwave Corporation
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No Preview Available ! v02.1201 MICROWAVE CORPORATION HMC278MS8G www.DataSheet4U.com 100 mW MEDIUM POWER GaAs MMIC AMPLIFIER, 1.7 - 3.0 GHz 1 1 - 38 Typical Applications The HMC278MS8G is ideal for: • PCS/3G & WLAN • MMDS & ISM Radios • HomeRF & BLUETOOTH Features P1dB Output Power: +20 dBm Single Supply: +3V to +5V Ultra Small 8 Lead MSOP Package Functional Diagram General Description The HMC278MS8G is a 100mW GaAs MMIC medium power ampliﬁer covering 1.7 to 3 GHz. The device is packaged in a low cost, surface mount 8 lead MSOP plastic package with an exposed base paddle for improved RF ground and thermal dissi- pation. The self-biased ampliﬁer provides 21 dB of gain and +20 dBm P1dB output power while operat- ing from a single positive supply of Vdd= +5V @ 130 mA. At Vdd = +3V the gain is 19 dB with a P1dB of +16dBm. With RF I/Os matched to 50 Ohm, external component requirements are minimal. At a height of 0.040” (1.0mm), the MSOP8 package is ideal for low proﬁle portable wireless devices. Use the HMC278MS8G with the HMC309MS8 inte- grated LNA/TxRx switch front-end for BLUETOOTH Class I, HomeRF, 802.11 WLAN, and ISM 2.4 GHz radios. Electrical Speciﬁcation, TA = +25° C, As a Function of Vdd Parameter Vdd = +5V Vdd = +5V Min. Typ. Max. Min. Typ. Max. Vdd = +3V Min. Typ. Max. Units Frequency Range 1.7 - 3.0 2.3 - 2.5 2.3 - 2.5 GHz Gain 15 20 25 16 21 25 15 19 23 dB Gain Flatness (Over Any 200 MHz BW) ± 0.7 ± 0.5 ± 0.5 dB Input Return Loss 5 10 7 10 7 10 dB Output Return Loss 6 10 7 10 7 10 dB Reverse Isolation 46 52 48 52 48 52 dB Output Power for 1 dB Compression (P1dB) 13.5 19 16.5 20 12.5 16 dBm Saturated Output Power (Psat) 16 21 19 22 15 18 dBm Output Third Order Intercept (IP3) 26 32 29 32 28 32 dBm Noise Figure 6 6 6 dB Supply Current (Idd) 130 165 130 165 125 140 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 1 page v02.1201 MICROWAVE CORPORATION HMC278MS8Gwww.DataSheet4U.com 100 mW MEDIUM POWER GaAs MMIC AMPLIFIER, 1.7 - 3.0 GHz 1 Absolute Maximum Ratings Supply Voltage (Vdd) Input Power (RFin)(Vdd = +5V) Channel Temperature (Tc) Thermal Resistance ( jc) (Channel Backside) Storage Temperature Operating Temperature +8 Vdc +10 dBm 175 °C 65 °C/W -65 to +150° C -55 to +85° C Note: 100 pF bypass capacitor to ground on Vdd line is recommended. Outline Drawing 1 - 42 1. MATERIAL: A. PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC. B. LEADFRAME & PADDLE MATERIAL: COPPER ALLOY 2. PLATING: LEAD & PADDLE - TIN SOLDER PLATE 3. DIMENSIONS ARE IN INCHES (MILLIMETER). UNLESS OTHERWISE SPECIFIED, ALL TOL. ARE ± 0.005 (± 0.13). 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 5 Page

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Número de pieza	Descripción	Fabricantes
HMC278MS8G	100 mW MEDIUM POWER GaAs MMIC AMPLIFIER 1.7 - 3.0 GHz	Hittite Microwave Corporation

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