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PDF HMC478ST89E Data sheet ( Hoja de datos )
| Número de pieza | HMC478ST89E | |
| Descripción | SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
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5
5 - 438
Designer’s Kit
Available
v02.1205
HMC478ST89 / 478ST89E
www.DataSheet4U.com
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
Typical Applications
The HMC478ST89 / HMC478ST89E is an ideal RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Features
P1dB Output Power: +18 dBm
Gain: 22 dB
Output IP3: +33 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +8V
Industry Standard SOT89 Package
Robust 1,000V ESD, Class 1C
Included in the HMC-DK001 Designer’s Kit
Functional Diagram
General Description
The HMC478ST89 & HMC478ST89E are SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT amplifiers covering DC to 4 GHz. Packaged
in an industry standard SOT89, the amplifier can be
used as a cascadable 50 Ohm RF/IF gain stage as
well as a LO or PA driver with up to +20 dBm output
power. The HMC478ST89 & HMC478ST89E offers 22
dB of gain with a +30 dBm output IP3 at 850 MHz while
requiring only 62mA from a single positive supply.
The Darlington feedback pair used results in reduced
sensitivity to normal process variations and excellent
gain stability over temperature while requiring a
minimal number of external bias components.
Electrical Specifications, Vs= 5.0 V, Rbias= 18 Ohm, TA = +25° C
Parameter
Min.
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
19
16
13
11
Gain Variation Over Temperature
DC - 4.0 GHz
Input Return Loss
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 4.0 GHz
Output Return Loss
DC - 3.0 GHz
3.0 - 4.0 GHz
Reverse Isolation
DC - 4.0 GHz
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
15
13
10
8
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
Noise Figure
DC - 2.0 GHz
2.0 - 4.0 GHz
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
Typ.
22
19
16
14
0.015
15
10
13
13
15
20
18
16
13
11
30
28
25
3
4
62
Max.
0.02
Units
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
5
Pin Descriptions
Pin Number
Function
1 RFIN
v02.1205
HMC478ST89 / 478ST89E
www.DataSheet4U.com
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
Description
This pin is DC coupled.
An off chip DC blocking capacitor is required.
Interface Schematic
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom must be connected to
RF/DC ground.
Application Circuit
Recommended Bias Resistor Values
for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
RBIAS VALUE
RBIAS POWER RATING
5V
18 Ω
1/8 W
6V
35 Ω
1/4 W
8V
67 Ω
1/2 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
5 - 442
Recommended Component Values for Key Application Frequencies
Component
L1
C1, C2
50
270 nH
0.01 μF
900
56 nH
100 pF
Frequency (MHz)
1900
2200
18 nH
18 nH
100 pF
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC478ST89E.PDF ] | |
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