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PDF HMC482ST89E Data sheet ( Hoja de datos )
| Número de pieza | HMC482ST89E | |
| Descripción | SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 5.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
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v02.0106
HMC482ST89 / 482ST89E
www.DataSheet4U.com
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
Designer’s Kit
5
Available
Typical Applications
Features
The HMC482ST89 / HMC482ST89E is an ideal RF/IF
gain block & LO or PA driver for:
• Cellular / PCS / 3G
• Fixed Wireless, WLAN & WiMAX
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
P1dB Output Power: +22 dBm
Gain: 20 dB
Output IP3: +36 dBm
Cascadable 50 Ohm I/Os
Single Supply: +6V to +12V
Industry Standard SOT89 Package
Included in the HMC-DK001 Designer’s Kit
Functional Diagram
General Description
The HMC482ST89 & HMC482ST89E are SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT amplifiers covering DC to 5 GHz. Packaged
in an industry standard SOT89, the amplifier can
be used as a cascadable 50 Ohm RF/IF gain stage
as well as a LO or PA driver with up to +24 dBm out-
put power. The Darlington feedback pair results in
reduced sensitivity to normal process variations and
excellent gain stability over temperature while requiring
a minimal number of external bias components.
5 - 474
Electrical Specifications, Vs= 8.0 V, Rbias= 27 Ohm, TA = +25° C
Parameter
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5.0 GHz
DC - 1.0 GHz
1.0 - 5.0 GHz
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5.0 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
Min.
17
15
12.5
10
8
19.5
17
14.5
12.5
10.5
Note: Data taken with broadband bias tee on device output.
Typ.
19
17
14.5
12
10
0.008
15
18
20
14
12
8
16
22.5
20
17.5
15.5
13.5
36
35
32
30
28
4
5
5.5
110
Max.
0.016
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
mA
1 page  
5
Pin Descriptions
Pin Number
Function
1 RFIN
v02.0106
HMC482ST89 / 482ST89E
www.DataSheet4U.com
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
Description
This pin is DC coupled.
An off chip DC blocking capacitor is required.
Interface Schematic
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom must be connected to
RF/DC ground.
Application Circuit
Recommended Bias Resistor Values for
Icc= 110 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
RBIAS VALUE
RBIAS POWER RATING
6V
9.1 Ω
1/4 W
8V
27 Ω
1/2 W
10V
47 Ω
1W
12V
62 Ω
1.5 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
5 - 478
Recommended Component Values for Key Application Frequencies
Component
L1
C1, C2
50
270 nH
0.01 μF
900
56 nH
100 pF
1900
18 nH
100 pF
Frequency (MHz)
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
5000
6.8 nH
100 pF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC482ST89E.PDF ] | |
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