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NTA7002N PDF даташит

Спецификация NTA7002N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Small Signal MOSFET».

Детали детали

Номер произв NTA7002N
Описание Small Signal MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTA7002N Даташит, Описание, Даташиты
NTA7002N
www.DataSheet4U.com
Small Signal MOSFET
30 V, 154 mA, Single, N−Channel, Gate
ESD Protection, SC−75
Features
Low Gate Charge for Fast Switching
Small 1.6 x 1.6 mm Footprint
ESD Protected Gate
Pb−Free Package is Available
Applications
Power Management Load Switch
Level Shift
Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA’s, Video Games, Hand−Held Computers, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady State = 25°C
VDSS
VGS
ID
30
"10
154
V
V
mA
Power Dissipation
(Note 1)
Steady State = 25°C PD
300 mW
Pulsed Drain Current
tP v 10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IDM
TJ,
TSTG
ISD
TL
618
−55 to
150
154
260
mA
°C
mA
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
416 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
http://onsemi.com
V(BR)DSS
30 V
RDS(on)
Typ @ VGS
1.4 W @ 4.5 V
2.3 W @ 2.5 V
ID MAX
(Note 1)
154 mA
3
1
2
N−Channel
PIN CONNECTIONS
SC−75 (3−Leads)
Gate 1
3 Drain
Source 2
(Top View)
3 MARKING DIAGRAM
3
2
1
SC−75 / SOT−416
CASE 463
STYLE 5
T6 MG
G
12
T6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTA7002NT1 SC−75 3000 Tape & Reel
NTA7002NT1G
SC−75
(Pb−Free)
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 1
1
Publication Order Number:
NTA7002N/D









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NTA7002N Даташит, Описание, Даташиты
NTA7002N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
V(BR)DSS
IDSS
IDSS
VGS = 0 V, ID = 100 mA
VGS = 0 V, VDS = 30 V
VGS = 0 V, VDS = 20 V,
T = 85 °C
Gate−to−Source Leakage Current
Gate−to−Source Leakage Current
Gate−to−Source Leakage Current
IGSS
IGSS
IGSS
VDS = 0 V, VGS = ±10 V
VDS = 0 V, VGS = ±5 V
VDS = 0 V, VGS = ±5 V
T = 85 °C
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
CAPACITANCES
VGS(TH)
RDS(on)
gFS
VDS = VGS, ID = 100 mA
VGS = 4.5 V, ID = 154 mA
VGS = 2.5 V, ID = 154 mA
VDS = 3 V, ID = 154 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3)
CISS
COSS
CRSS
VDS = 5.0 V, f = 1 MHz,
VGS = 0 V
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Drain−Source Diode Characteristics
td(ON)
tr
td(OFF)
tf
VGS = 4.5 V, VDS = 5.0 V,
ID = 75 mA, RG = 10 W
Forward Diode Voltage
VSD VGS = 0 V, IS = 0.154 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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Min Typ Max Unit
30 V
1.0 mA
1.0 mA
±25 mA
±1.0 mA
±1.0 mA
0.5 1.0 1.5 V
1.4 7.0
W
2.3 7.5
80 mS
11.5
10 pF
3.5
13 ns
15
98 ns
60
0.77 0.9 V
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NTA7002N Даташит, Описание, Даташиты
NTA7002N
TYPICAL PERFORMANCE CURVES
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0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
VGS = 10 V
5V
2.8 V
2.4 V
TJ = 25°C
2V
1.4 V
1.2 V
0.4 0.8 1.2 1.6 2.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0.2
VDS = 5 V
0.16
0.12
0.08
0.04
0
0.6
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.8 1 1.2 1.4 1.6 1.8 2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.5
VGS = 4.5 V
2
TJ = 125°C
2.5
TJ = 25°C
2
VGS = 2.5 V
1.5
TJ = 25°C
1
TJ = −55°C
0.5
0
0.05 0.1 0.15
ID, DRAIN CURRENT (AMPS)
0.2
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.5
VGS = 4.5 V
1
0.5
0
0.05 0.1 0.15
ID, DRAIN CURRENT (AMPS)
0.2
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
1.8
ID = 0.15 A
VGS = 4.5 V
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1000
VGS = 0 V
100
TJ = 150°C
10
TJ = 125°C
1
0 5 10 15 20 25 30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
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