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SC1405D PDF даташит

Спецификация SC1405D изготовлена ​​​​«Semtech» и имеет функцию, называемую «High Speed Synchronous Power MOSFET Smart Driver».

Детали детали

Номер произв SC1405D
Описание High Speed Synchronous Power MOSFET Smart Driver
Производители Semtech
логотип Semtech логотип 

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SC1405D Даташит, Описание, Даташиты
POWER MANAGEMENT
Description
The SC1405D is a Dual-MOSFET Driver with an internal
Overlap Protection Circuit to prevent shoot-through. Each
driver is capable of driving a 3000pF load in 15ns rise/
fall time and has ULTRA-LOW propagation delay from in-
put transition to the gate of the power FETs. Adaptive
Overlap Protection circuit ensures that the synchronous
FET does not turn on until the top FET source has reached
a voltage low enough to prevent shoot-through. The de-
lay between the bottom gate going low to the top gate
transitioning high is externally programmable via a ca-
pacitor to minimize dead time. The bottom FET may be
disabled at light loads by keeping S_MOD low to trigger
asynchronous operation, thus saving the bottom FET’s
gate drive current and inductor ripple current.
An internal voltage reference allows threshold adjustment
for an Output Over-Voltage protection circuitry, indepen-
dent of the PWM controller. The device provides over-
voltage protection independent of the PWM feedback
loop with a unique “adaptive OVP” comparator which re-
jects noise but responds quickly to a true OVP situation.
Under-Voltage-Lock-Out circuit is included to guarantee
that both driver outputs are off when Vcc is less than or
equal to 4.4V (typ) at supply ramp up (4.35V at supply
ramp down). A CMOS output provides status indication
of the 5V supply. A low enable input places the IC in stand-
by mode, reducing supply current to less than 10µA.
SC1405D
High Speed Synchronous Power
MOSFEwTwwS.DmataSaherett4UD.croimver
Features
‹ Fast rise and fall times (15ns withP3R00E0LpIMf loINadA) RY
‹ 14ns max. Propagation delay (BG going with low)
‹ Adaptive and programmable shoot-through
protection
‹ Adaptive overvoltage protection
‹ Wide input voltage range (4.5V - 25V)
‹ Programmable delay between FETs
‹ Power saving asynchronous mode control
‹ Output overvoltage protection/overtemp shutdown
‹ Under-Voltage lock-out and power ready signal
‹ Less than 10µA stand-by current (EN=low)
‹ Power ready output signal
‹ High frequency (to 1.2MHz) operation allows use of
small inductors and low cost caps in place of
electrolytics
‹ TSSOP-14 package
Applications
‹ High Density/Fast transient microprocessor power
supplies
‹ Motor Drives/Class-D amps
‹ High efficiency portable computers
Typical Application Circuit
Revision: June 8, 2005
1
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SC1405D Даташит, Описание, Даташиты
SC1405D
POWER MANAGEMENT
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Absolute Maximum Ratings
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified
in the Electrical Characteristics section is not implied.
Parameter
Symbol
Conditions
Minimum Maximum Units
VCC Supply Voltage
BST to PGND
BST to DRN
DRN to PGND
DRN to PGND Pulse
OVP_S to PGND
EN, CO, DSPS, MODE, PRDY,
DELAY to AGND
VCCMAX
VMAXBST-PGND
VMAXBST-DRN
VMAXDRN-PGN
VMAXPULSE
VMAXOVP S-PGND
DC
tPULSE < 100nS
-0.3 7 V
-0.3 30 V
-0.3 8 V
-2 25 V
-5 25 V
-0.3 10 V
-0.3
VCC + 0.3
V
AGND to PGND
-1 +1 V
Continuous Power Dissipation
Thermal Impedance Junction to Case
Pd Tamb = 25°C, TJ = 125°C
Tcase = 25°C, TJ = 125°C
θJC
0.66
2.56
W
40 °C/W
Thermal Impedance Junction to
Ambient
θJA
150 °C/W
Junction Temperature Range
Storage Temperature Range
Lead Temperature (Soldering) 10 Sec.
NOTE:
(1) Specification refers to application circuit.
TJ
TSTG
TLEAD
Electrical Characteristics - DC Operating Specifications
Unless otherwise specified: -40 < TJ < 125°C; VCC = 6V; 4V < VBST < 26V
Parameter
Symbol
Conditions
Min
-40
+125
°C
-65
+150
°C
300 °C
Typ Max Units
Power Supply
Supply Voltage
Quiescent Current
VCC
Iq_stby
EN = 0V
4.6 5
6.0 V
10 µA
Quiescent Current, operating
PRDY
High Level Output Voltage
Low Level Output Voltage
Sink Current
2005 Semtech Corp.
Iq_op
VCC = 5V, CO = 0V
VOH
VOL
IO_SINK
VCC = 4.7V, lload = 10mA
VCC < UVLO threshold,
lload = 10µA
VPRDY = 0.4V
2
4.5
5
1
4.55
0.1
10
mA
V
0.2 V
mA
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SC1405D Даташит, Описание, Даташиты
SC1405D
POWER MANAGEMENT
Electrical Characteristics - DC Operating Specifications
Parameter
Symbol
Conditions
DSPS_DR
High Level Output Voltage VOH VCC = 4.6V, Cload = 100pF
Low Level Output Voltage VOL VCC = 4.6V, Cload = 100pF
Under Voltage Lockout
Start Threshold
Hysteresis
Vhys
Logic Active Threshold
EN is low
Overvoltage Protection
Trip Threshold
Hysteresis
Trip Delay, 50mV Overdrive
Trip Delay, 100mV Overdrive
S_MOD
VTRIP
VhysOVP
TJ = 0 to 125oC
TJ = 0 to 125oC
High Level Input Voltage
Low Level Input Voltage
Enable
VIH
VIL
High Level Input Voltage
Low Level Input Voltage
CO
VIH
VIL
High Level Input Voltage
Low Level Input Voltage
Thermal Shutdown
VIH
VIL
Over Temperature Trip Point
Hysteresis
High-Side Driver
TOTP
THYST
Peak Output Current
Output Resistance
Low-Side Drive
IPKH
RsrcTG
RsinkTG
duty cycle < 2%, tpw < 100µs,
TJ = 125°C, VBST - VDRN = 4.5V,
VTG = 4.0V (src)+VDRN
or VTG = 0.5V (sink)+VDRN
Peak Output Current
Output Resistance
2005 Semtech Corp.
IPKL
RsrcBG
RsinkBG
duty cycle < 2%, tpw < 100µs,
TJ = 125°C,
VV S = 4.6V,
VBG = 4V (src)
or VLOWDR = 0.5V (sink)
3
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Min Typ Max Units
4.15 V
0.05 V
4.2 4.4 4.6
0.05
1.5
V
V
V
1.17 1.225 1.28
0.8
300 470
800
125 225 400
2.0
0.8
2.0
0.8
2.0
0.8
165
10
3
1
.7
3
1.2
V
V
ns
ns
V
V
V
V
V
V
oC
oC
A
A
1.0
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Номер в каталогеОписаниеПроизводители
SC1405HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVERSemtech Corporation
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SC1405BHIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVERSemtech Corporation
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SC1405BHigh Speed Synchronous Power MOSFET Smart DriverSemtech Corporation
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