SC2615 PDF даташит
Спецификация SC2615 изготовлена «Semtech» и имеет функцию, называемую «Complete DDR Power Solution». |
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Детали детали
Номер произв | SC2615 |
Описание | Complete DDR Power Solution |
Производители | Semtech |
логотип |
13 Pages
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POWER MANAGEMENT
Description
The SC2615 is a fully integrated, Three in One, Linear
DDR power solution providing power for the VDDQ and
the VTT rails. The SC2615 completely adheres to the
ACPI sleep state power requirements per IntelR
motherboard specifications. A linear regulator controller
provides the high current of the VDDQ during S0, via an
external Power MOSFET, while an internal 1.8A (min) sink/
source regulator supplies the termination voltage.
In addition to these two blocks, an Internal LDO provides
VDDQ power during S3, capable of sourcing 650 mA.
The SC2615 uses IntelR defined Latched BF_CUT signal
which is also used to drive the external Blocking MOSFET.
Additional logic, two UVLOs and three thermal shutdown
circuits assure reliability of this single chip DDR power
solution. A Power Good Output indicates the rails are in
regulation.
A Soft Start/Enable pin assures proper startup and allows
external shutdown control. The MLP package provides
excellent thermal impedance while keeping a small
footprint.
Typical Application Circuit
SC2615
Complete DDR Power Solution
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Features
Single chip solution adheres to ACPI sleep state
requirements using BF_CUT
UVLO on 3.3V and 12V
Internal S3 state LDO for VDDQ supplies 650 mA
Dual thermal shutdown
Fast transient response
Internal VTT regulator Sinks and Sources 1.8A
(Min)
Power good output
18 pin MLP package
Applications
DDR power solution for IntelR motherboard
applications
High speed data line termination
Graphic cards
Disk drives
12V
5V
5V STBY
1uF
BF_CUT
PWRGD
BF_CUT
PWRGD
0.1uF
Cin
SC2615
16 12VCC
3.3VCC 9
4 5VSBY
TG 15
11 BF_CUT
NC 14
10 PGOOD
NC 13
18 SS/EN VDDQSTBY 7
17 NC
VDDQIN 8
12 AGND
FB 1
3 LGND
VTT 6
2 VTTSNS
VTT 5
Cout
VDDQ
VTT
Revision 2, April 2003
1
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SC2615
POWER MANAGEMENT
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Absolute Maximum Ratings
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified
in the Electrical Characteristics section is not implied.
Parameter
Symbol
Maximum
Units
Input Supply Voltage, 3.3VCC
Input Supply Voltage, 12VCC
VTT Output Current
5V Standby Input Voltage
Inputs and Outputs
VCC3
VCC12
IO(VTT)
V5SB
I/O
7
15
±3
7
5VSTBY +0.3, GND -0.3
V
V
A
V
V
AGND to LGND
±0.3 V
Operating Ambient Temperature Range
Operating Junction Temperature
Thermal Resistance Junction to Ambient (1)
Thermal Resistance Junction to Case (1)
Storage Temperature
TA
TJ
θJA
θJC
TSTG
0 to 70
125
25
4
-65 to 150
°C
°C
°C/W
°C/W
°C
Lead Temperature (Soldering) 10seconds
ESD Rating (Human Body Model)
TLEAD
ESD
300 °C
2 kV
Electrical Characteristics
Unless specified: TA = 0 to 70°C, VCC12 = 12V, VCC3 = 3.3V, 5VSTBY = 5V.
Parameter
Symbol
Conditions
Min Typ Max Units
3.3V Supply Voltage
12V Supply Voltage
5V Standby Voltage
5V STBY Input Quiescent
Current
VCC3.3
VCC12
V5SB
IQ(STBY)
3.0 3.3 3.6
V
10.8 12 13.2 V
4.5 5 5.5 V
S0 2.4 mA
BF_CUT Threshold
TTL
12V Under Voltage Lockout
3.3V Under Voltage Lockout
Feedback Reference
Feedback Current
5V STBY in S3 Current
SS/EN Shutdown Threshold
Thermal Shutdown
UVLO12
UVLO3.3
VREF
IFB
IQ(STBY)
VEN(TH)
7 8.2 10
2.4 2.9 3.0
1.25
2
25
0.2
150
V
V
V
µA
mA
V
°C
2003 Semtech Corp.
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SC2615
POWER MANAGEMENT
Electrical Characteristics (Cont.)
Unless specified: TA = 0 to 70°C, VCC12 = 12V, VCC3 = 3.3V, 5VSTBY = 5V.
Parameter
Symbol
Conditions
VDDQ Linear
Output Voltage
VOUT
DDR1
DDR2
Soft Start Current
Overcurrent Trip Voltage
Error Amplifier Bandwidth
ISS
VTRIP
BW
Load Regulation
Error Amplifier Gain
AOL
Tjmax<125°C
Power Good Low
1mA sink
Power Good High Leakage
5V
STBY LDO
Output Current
S3
Load Regulation
VTT LDO
Tjmax<125°C
Source and Sink Currents(2)
Load Regulation
ITT
Error Amplifier Gain
GEA
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Min Typ
Max Units
2.450
1.764
50
2.5
1.8
25
60
5
75
50
0.1
2.550
1.836
70
2
400
2
V
V
µA
%
MHz
%
db
mV
µA
650 mA
2%
1.8 2.0
75
A
2.5 %
db
Notes:
(1) Mounting considerations: The thermal copper pad on bottom of device must be soldered to a solid copper
area, of 1 inch * 1 inch (min.) with multiple vias under the device to achieve specified θ JA and θ JC,
(See recommended land pattern).
(2) This limit indicates that the regulator has a current limit threshold that is greater than the rated Minimum
current. The rated current can only be achieved if the Absolute Maximum Junctions temperatures are not
violated. The amount of heatsinking determines the maximum usable VTT current.
2003 Semtech Corp.
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