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NSBC114EDXV6T1 PDF даташит

Спецификация NSBC114EDXV6T1 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Dual Bias Resistor Transistors».

Детали детали

Номер произв NSBC114EDXV6T1
Описание Dual Bias Resistor Transistors
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSBC114EDXV6T1 Даташит, Описание, Даташиты
NSBC114EDXV6T1,
NSBC114EDXV6T5
Preferred Devices
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EDXV6T1
series, two BRT devices are housed in the SOT−563 package which is
ideal for low power surface mount applications where board space is at
a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Lead−Free Solder Plating
These are Pb−Free Devices
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Rating
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
VCBO
VCEO
IC
50
50
100
Characteristic
(One Junction Heated)
Symbol
Max
Total Device Dissipation; TA = 25°C
Derate above 25°C
PD 357 (Note 1)
2.9 (Note 1)
Thermal Resistance, Junction-to-Ambient RqJA
Characteristic
(Both Junctions Heated)
Symbol
350 (Note 1)
Max
Total Device Dissipation; TA = 25°C
Derate above 25°C
PD 500 (Note 1)
4.0 (Note 1)
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
Range
RqJA
TJ, Tstg
250 (Note 1)
−55 to +150
1. FR−4 @ Minimum Pad
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 6
1
www.DataSheet4U.com
http://onsemi.com
(3) (2) (1)
R1 R2
Q1
R2 R1
Q2
(4) (5)
(6)
NSBC114EDXV6T1
MARKING
DIAGRAM
SOT−563
CASE 463A
xx M G
1
PLASTIC
1
xx = Device Code (Refer to Page 2)
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NSBC1xxxDXV6T1 SOT−563* 4000/Tape & Reel
NSBC1xxxDXV6T1G SOT−563* 4000/Tape & Reel
NSBC1xxxDXV6T5 SOT−563* 8000/Tape & Reel
NSBC1xxxDXV6T5G SOT−563* 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*This package is inherently Pb−Free.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
NSBC114EDXV6/D









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NSBC114EDXV6T1 Даташит, Описание, Даташиты
NSBC114EDXV6T1, NSBC114EDXV6T5
DEVICE MARKING, ORDERING, AND RESISTOR VALUES
Device
Package*
Marking
NSBC114EDXV6T1
SOT−563
7A
NSBC124EDXV6T1
SOT−563
7B
NSBC144EDXV6T1
SOT−563
7C
NSBC114YDXV6T1
SOT−563
7D
NSBC114TDXV6T1 (Note 2)
SOT−563
7E
NSBC143TDXV6T1 (Notes 2)
SOT−563
7F
NSBC113EDXV6T1 (Note 2)
SOT−563
7G
NSBC123EDXV6T1 (Notes 2)
SOT−563
7H
NSBC143EDXV6T1 (Notes 2)
SOT−563
7J
NSBC143ZDXV6T1 (Notes 2)
SOT−563
7K
NSBC124XDXV6T1 (Notes 2)
SOT−563
7L
NSBC123JDXV6T1 (Note 2)
SOT−563
7M
NSBC115EDXV6T1 (Notes 2)
SOT−563
7N
NSBC144WDXV6T1 (Notes 2)
SOT−563
7P
†The “G’’ suffix indicates Pb−Free package available.
*This package is inherently Pb−Free.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
R1 (kW)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
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R2 (kW)
10
22
47
47
1.0
2.2
4.7
47
47
47
100
22
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol Min
Typ Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
NSBC114EDXV6T1
NSBC124EDXV6T1
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
ICBO
ICEO
IEBO
− − 100 nAdc
− − 500 nAdc
− − 0.5 mAdc
− − 0.2
− − 0.1
− − 0.2
− − 0.9
− − 1.9
− − 4.3
− − 2.3
− − 1.5
− − 0.18
− − 0.13
− − 0.2
− − 0.05
− − 0.13
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
V(BR)CBO
V(BR)CEO
50
50
− Vdc
− Vdc
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NSBC114EDXV6T1 Даташит, Описание, Даташиты
NSBC114EDXV6T1, NSBC114EDXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continuedw)ww.DataSheet4U.com
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
NSBC114EDXV6T1
NSBC124EDXV6T1
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
hFE
35 60
60 100
80 140
80 140
160 350
160 350
3.0 5.0
8.0 15
15 30
80 200
80 150
80 140
80 150
80 140
Collector-Emitter Saturation Voltage
VCE(sat) − − 0.25 Vdc
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA)
NSBC113EDXV6T1/NSBC123EDXV6T1
(IC = 10 mA, IB = 1 mA)
NSBC114TDXV6T1/NSBC143TDXV6T1
NSBC143EDXV6T1/NSBC143ZDXV6T1/NSBC124XDXV6T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
NSBC114EDXV6T1
NSBC124EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC144EDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
NSBC113EDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC143ZDXV6T1
VOL
VOH
Vdc
− − 0.2
− − 0.2
− − 0.2
− − 0.2
− − 0.2
− − 0.2
− − 0.2
− − 0.2
− − 0.2
− − 0.2
− − 0.2
− − 0.2
− − 0.2
− − 0.2
4.9 −
− Vdc
Input Resistor
NSBC114EDXV6T1
NSBC124EDXV6T1
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
R1
7.0 10 13
15.4 22 28.6
32.9 47 61.1
7.0 10 13
7.0 10 13
3.3 4.7 6.1
0.7 1.0 1.3
1.5 2.2 2.9
3.3 4.7 6.1
3.3 4.7 6.1
15.4 22 28.6
1.54 2.2 2.86
70 100 130
32.9 47 61.1
kW
Resistor Ratio
NSBC114EDXV6T1/NSBC124EDXV6T1/
NSBC144EDXV6T1/NSBC115EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1/NSBC143TDXV6T1
NSBC113EDXV6T1/NSBC123EDXV6T1/NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC144WDXV6T1
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
R1/R2
0.8
0.17
0.8
0.055
0.38
0.038
1.7
1.0
0.21
1.0
0.1
0.47
0.047
2.1
1.2
0.25
1.2
0.185
0.56
0.056
2.6
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Номер в каталогеОписаниеПроизводители
NSBC114EDXV6T1Dual Bias Resistor TransistorsON Semiconductor
ON Semiconductor
NSBC114EDXV6T5Dual Bias Resistor TransistorsON Semiconductor
ON Semiconductor

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