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PDF NSBC114EPDXV6T1 Data sheet ( Hoja de datos )
| Número de pieza | NSBC114EPDXV6T1 | |
| Descripción | Dual Bias Resistor Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NSBC114EPDXV6T1,
NSBC114EPDXV6T5
Preferred Devices
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EPDXV6T1
series, two complementary BRT devices are housed in the SOT−563
package which is ideal for low power surface mount applications
where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch Tape and Reel
• Lead Free Solder Plating
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, − minus sign for Q1 (PNP) omitted)
Rating
Symbol Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
VCBO 50 Vdc
VCEO 50 Vdc
IC 100 mAdc
Characteristic
(One Junction Heated)
Symbol Max
Unit
Total Device Dissipation
Derate above 25°C
TA = 25°C PD
357
(Note 1)
2.9
(Note 1)
mW
mW/°C
Thermal Resistance Junction-to-Ambient RqJA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol Max
Unit
Total Device Dissipation
Derate above 25°C
TA = 25°C PD
500
(Note 1)
4.0
(Note 1)
mW
mW/°C
Thermal Resistance Junction-to-Ambient RqJA
250
(Note 1)
°C/W
Junction and Storage Temperature
TJ, Tstg
−55 to
+150
°C
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 3
1
www.DataSheet4U.com
http://onsemi.com
(3) (2) (1)
R1 R2
Q1
R2 R1
Q2
(4) (5)
(6)
654
12 3
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
xx D
xx = Specific Device Code
(see table on page 2)
D = Date Code
ORDERING INFORMATION
Device
Package Shipping
NSBC114EPDXV6T1 SOT−563 4 mm pitch
4000/Tape & Reel
NSBC114EPDXV6T5 SOT−563 2 mm pitch
8000/Tape & Reel
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
NSBC114EPDXV6/D
1 page  
NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 NPN TRAwNwSwIS.DTaOtaRSheet4U.com
1
IC/IB = 10
0.1
0.01
TA = −25°C
25°C
75°C
1000
100
VCE = 10 V
TA = 75°C
25°C
−25°C
0.001
0
20 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
10
50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
4 100 25°C
f = 1 MHz
75°C
3
IE = 0 V
TA = 25°C
10
TA = −25°C
1
2
0.1
1
0.01
VO = 5 V
0 0 10 20 30 40 50 0.001 0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
VO = 0.2 V
1
TA = −25°C
75°C
25°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
http://onsemi.com
5
5 Page 
NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 NPN TRAwNwSwIS.DTaOtaRSheet4U.com
1
IC/IB = 10
0.1
0.01
TA = −25°C
25°C
75°C
0.001 0
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 32. VCE(sat) versus IC
80
300
VCE = 10
250
200
150
TA = 75°C
25°C
−25°C
100
50
01 2 4 6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Figure 33. DC Current Gain
4
3.5 f = 1 MHz
lE = 0 V
3 TA = 25°C
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 34. Output Capacitance
100
TA = 75°C
10
25°C
−25°C
VO = 5 V
1
0 2 4 6 8 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 35. Output Current versus Input Voltage
10
VO = 0.2 V
1
TA = −25°C
25°C
75°C
0.1 0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 36. Input Voltage versus Output Current
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