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SC1211VX PDF даташит

Спецификация SC1211VX изготовлена ​​​​«Semtech» и имеет функцию, называемую «High Speed - Combi-Sense - Synchronous MOSFET Driver for Mobile Applications».

Детали детали

Номер произв SC1211VX
Описание High Speed - Combi-Sense - Synchronous MOSFET Driver for Mobile Applications
Производители Semtech
логотип Semtech логотип 

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SC1211VX Даташит, Описание, Даташиты
POWER MANAGEMENT
Description
SC1211VX
High Speed, Combi-Sense®, Synchronous
MOSFET Driver for Mowbwiwl.eDaAtapShpeelti4cUa.cotmions
Features
The SC1211VX is a high speed, Combi-Sense®, dual out-
put driver designed to drive high-side and low-side
MOSFETs in a synchronous Buck converter. These
drivers combined with Combi-Sense® PWM controllers,
such as Semtech SC2643VX or SC2643, provide a
cost effective multi-phase voltage regulator for advanced
microprocessors.
The Combi-Sense® is a technique to sense the inductor
current for peak current mode control of voltage regula-
tor without using sensing resistor. It provides the follow-
ing advantages:
- No costly precision sensing resistor
- Lossless current sensing
- High level noise free signal
- Fast response
- Suitable for wide range of duty cycle
- Only two small signal components (third optional)
The detailed explanation of the technique can be found
in the Applications Information section.
u High efficiency
u High peak drive current
u Adaptive non-overlapping gate drives provide
shoot-through protection
u Support Combi-Sense® and VID-on-fly operations
u Fast rise and fall times (15ns typical with 3000pf
load)
u Ultra-low (<30ns) propagation delay (BG going low)
u Floating top gate drive
u Crowbar function for over voltage protection
u High frequency (to 1.5 MHz) operation allows use
of small inductors and low cost ceramic capacitors
u Under-voltage-lockout
u Low quiescent current
u Power SOIC-8L package, fully RoHS and WEEE
compliant
A 30ns max propagation delay from input transition to
the gate of the power FET’s guarantees operation at high
switching frequencies. Internal overlap protection circuit
prevents shoot-through from Vin to PGND in the main
and synchronous MOSFETs. The adaptive overlap pro-
tection circuit ensures the bottom FET does not turn on
until the top FET source has reached 1V, to prevent cross-
conduction.
Applications
u Intel Pentium® processor power supplies
u AMD AthlonTM and AMD-K8TM processor power
supplies
u High efficiency portable and notebook computers
u Battery powered applications
u High current low voltage DC-DC converters
High current drive capability allows fast switching, thus
reducing switching losses at high (up to 1.5MHz) frequen-
cies without causing thermal stress on the driver.
Under-voltage-lockout and over-temperature shutdown
features are included for proper and safe operation.
Timed latches and improved robustness are built into
the housekeeping functions such as the Under Voltage
Lockout and adaptive Shoot-through protection circuitry
to prevent false triggering and to assure safe operation.
The SC1211VX is offered in a Power SOIC-8L package.
October 12, 2005
1 www.semtech.com









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SC1211VX Даташит, Описание, Даташиты
POWER MANAGEMENT
Typical Application Circuit
SC1211VX
www.DataSheet4U.com
Vin (+12V)
PWM
Vcc (+5V)
D1
1N4148
C1
1uF
Q1
R1
U1
PGND 9
1R0
SC1211V X
L1
12
Q2
C2
1uF
R2
C3
Vout
C4
Inductor Curr ent Signal
2005 Semtech Corp.
2
www.semtech.com









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SC1211VX Даташит, Описание, Даташиты
SC1211VX
POWER MANAGEMENT
www.DataSheet4U.com
Absolute Maximum Ratings
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified
in the Electrical Characteristics section is not implied.
Parameter
Symbol
Conditions
Maximum
Units
VCC Supply Voltage
VIN to PGND
BST to DRN
BST to PGND
BST to PGND Pulse
DRN to PGND
DRN to PGND Pulse
VPN to PGND
PWM Input
VCC
VIN
VBST-DRN
VBST-PGND
VBST_PULSE
VDRN-PGND
VDRN_PULSE
VPN
CO
tPULSE < 100ns
tPULSE < 100ns
10
30
10
36
41
-2 to 29
-4 to 34
30
-0.3 to 5
V
V
V
V
V
V
V
V
V
Continuous Power Dissipation
PD
TA = 25°C, TJ =125°C
2.56
Thermal Resistance Junction to Case
θJC
8
Operating Junction Temperature Range
TJ
0 to +125
Storage Temperature Range
TSTG
-65 to +150
Lead Temperature (Soldering) 10 Sec.
TLEAD
300
NOTE:
(1) This device is ESD sensitive. Use of standard ESD handling precautions is required.
W
°C/W
°C
°C
°C
Electrical Characteristics
Unless specified: TA = 25°C; VCC = 5V
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Power Supply
Supply Voltage
Quiescent Current, Operating
Under Voltage Lockout
VCC
Iq_op
4.3 5 6.0 V
3.0 mA
Start Threshold
Hysteresis
VCC_START
VhysUVLO
4 4.3
160
V
mV
2005 Semtech Corp.
3
www.semtech.com










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Номер в каталогеОписаниеПроизводители
SC1211VXHigh Speed - Combi-Sense - Synchronous MOSFET Driver for Mobile ApplicationsSemtech
Semtech

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