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PDF HMC532LP4E Data sheet ( Hoja de datos )
| Número de pieza | HMC532LP4E | |
| Descripción | MMIC VCO w/ BUFFER AMPLIFIER | |
| Fabricantes | Hittite Microwave | |
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v01.0508
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier for:
• VSAT Radio
• Point to Point/Multipoint Radio
• Test Equipment & Industrial Controls
• Military End-Use
Functional Diagram
12
HMC532LP4 / 532LP4E
MMIC VCO w/ BUFFER
AMPLIFIER, 7.1 - 7.9 GHz
Features
Pout: +14 dBm
Phase Noise: -103 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: +3V @ 85 mA
24 Lead 4x4mm QFN Package: 9 mm2
General Description
The HMC532LP4 & HMC532LP4E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs
with integrated resonators, negative resistance
devices, varactor diodes, and buffer amplifiers.
Covering 7.1 to 7.9 GHz, the VCO’s phase noise
performance is excellent over temperature, shock
and vibration due to the oscillator’s monolithic struc-
ture. Power output is +14 dBm typical from a single
supply of +3V @ 85 mA. The voltage controlled
oscillator is packaged in a leadless QFN 4 x 4 mm
surface mount package.
Electrical Specifications, TA = +25° C, Vcc = +3V
Parameter
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage (Vtune)
Supply Current (Icc) (Vcc = +3V)
Tune Port Leakage Current
Output Return Loss
Harmonics
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= +5V
Frequency Drift Rate
Min.
12
1
60
Typ.
7.1 - 7.9
14
-101
85
15
-14
-25
28
78
0.85
Max.
17
13
100
10
Units
GHz
dBm
dBc/Hz
V
mA
μA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
12 - 146
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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| PDF Descargar | [ Datasheet HMC532LP4E.PDF ] | |
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